Defects and Defect Passivation in Perovskite Solar Cells.

Perovskite solar cells have made significant strides in recent years. However, there are still challenges in terms of photoelectric conversion efficiency and long-term stability associated with perovskite solar cells. The presence of defects in perovskite materials is one of the important influencing factors leading to subpar film quality. Adopting additives to passivate defects within perovskite materials is an effective approach. Therefore, we first discuss the types of defects that occur in perovskite materials and the mechanisms of their effect on performance. Then, several types of additives used in perovskite solar cells are discussed, including ionic compounds, organic molecules, polymers, etc. This review provides guidance for the future development of more sustainable and effective additives to improve the performance of solar cells.

Tuning crystal orientation and chiral spin order in Mn3Ge by annealing process and ion implantation.

The non-collinear antiferromagnetic Weyl semimetal Mn3X (X = Ga, Ge, Sn) system has attracted a lot of attentions owing to its robust anomalous Hall effect (AHE), large spin Hall angle and small net magnetization at room temperature. The high spin-charge interconversion efficiency makes it a super candidate in topological antiferromagnetic spintronic devices, which could facilitate ultra-fast operation of high-density devices with low energy consumption. In this work, we have realized to obtain different chiral spin structures in Heusler alloy Mn3Ge thin films, which originate from different crystalline orientations. The high-quality (0002)- and (202¯0)-oriented single phase hexagonal Mn3Ge films are achieved by controllable growth, annealing process and ion implantation. The various magnetic properties and AHE behaviors are observed alongaandccrystal axes, equivalent to magnetic field in and out of the inverse triangular spin plane. The observation demonstrates the manipulation of crystal structure accompanied with chiral spin order in a non-collinear antiferromagnetic Mn3Ge film, which is induced by energy conversion and defect introduction. Thein situthermal treatment induces crystal phase rotation up to 90° and robust AHE modulation, which is significantly important and highly desirable for flexible spin memory device applications.

Random Lasing from Label-Free Living Cells for Rapid Cytometry of Apoptosis.

A random laser carrying the scattering information on a biological host is a promising tool for the characterization of biophysical properties. In this work, random lasing from label-free living cells is proposed to achieve rapid cytometry of apoptosis. Random lasing is achieved by adding biocompatible gain medium to a confocal dish containing cells under optically pumped conditions. The random lasing characteristics are distinct at different stages of cell apoptosis after drug treatment. By analyzing the power Fourier transform results of the random lasing spectra, the percentage of apoptotic cells could be distinguished within two seconds, which is more than an order of magnitude faster than traditional flow cytometry. These results provide a label-free approach for rapid cytometry of apoptosis, which is advantageous for further research of random lasers in the biological field.

Chiral-Molecule-Based Spintronic Devices.

Spintronics and molecular chemistry have achieved remarkable achievements separately. Their combination can apply the superiority of molecular diversity to intervene or manipulate the spin-related properties. It inevitably brings in a new type of functional devices with a molecular interface, which has become an emerging field in information storage and processing. Normally, spin polarization has to be realized by magnetic materials as manipulated by magnetic fields. Recently, chiral-induced spin selectivity (CISS) was discovered surprisingly that non-magnetic chiral molecules can generate spin polarization through their structural chirality. Here, the recent progress of integrating the strengths of molecular chemistry and spintronics is reviewed by introducing the experimental results, theoretical models, and device performances of the CISS effect. Compared to normal ferromagnetic metals, CISS originating from a chiral structure has great advantages of high spin polarization, excellent interface, simple preparation process, and low cost. It has the potential to obtain high efficiency of spin injection into metals and semiconductors, getting rid of magnetic fields and ferromagnetic electrodes. The physical mechanisms, unique advantages, and device performances of CISS are sequentially clarified, revealing important issues to current scientific research and industrial applications. This mini-review points out a key technology of information storage for future spintronic devices without magnetic components.

Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions.

Hall-effect in semiconductors has wide applications for magnetic field sensing. Yet, a standard Hall sensor retains two problems: its linearity is affected by the non-uniformity of the current distribution; the sensitivity is bias-dependent, with linearity decreasing with increasing bias current. In order to improve the performance, we here propose a novel structure which realizes bias-free, photo-induced Hall sensors. The system consists of a semi-transparent metal Pt and a semiconductor Si or GaAs to form a Schottky contact. We systematically compared the photo-induced Schottky behaviors and Hall effects without net current flowing, depending on various magnetic fields, light intensities and wavelengths of Pt/GaAs and Pt/Si junctions. The electrical characteristics of the Schottky photo-diodes were fitted to obtain the barrier height as a function of light intensity. We show that the open-circuit Hall voltage of Pt/GaAs junction is orders of magnitude lower than that of Pt/Si, and the barrier height of GaAs is smaller. It should be attributed to the surface states in GaAs which block the carrier drifting. This work not only realizes the physical investigations of photo-induced Hall effects in Pt/GaAs and Pt/Si Schottky junctions, but also opens a new pathway for bias-free magnetic sensing with high linearity and sensitivity comparing to commercial Hall-sensors.

A hybrid polymer protective layer with uniform Li+ flux and self-adaption enabling dendrite-free Li metal anodes.

Lithium (Li) metal is considered as an ideal negative electrode material for next-generation secondary batteries; however, the hideous dendrite growth and parasitic reactions hinder the practical applications of Li metal batteries. Herein, a hybrid polymer film composed of polyvinyl alcohol (PVA) and polyacrylic acid (PAA) is adopted as an artificial protective layer to inhibit the dendritic formation and side reactions in Li metal anodes. PVA with large quantities of polar functional groups can induce even distribution of Li ions (Li+). Alternatively, PAA can in situ react with Li metal to form highly elastic and ionic conducting lithium polyacrylic acid (LiPAA), thereby enabling tight contact and flexible self-adaption with Li metal anodes. Therefore, such a rationally designed functional composite layer, with good binding ability and relatively high Li+ conductivity, as well as excellent capability of homogenizing Li+ flow, accordingly enables Li metal anodes to reveal dendrite-free plating/stripping behaviours and minimum volume variation. As a result, the PVA-PAA modified Li metal anode delivered stable cycling for 700 and 250 h, respectively, at current densities of 1 and 3 mA cm-2 under an areal capacity of 1 mA h cm-2, in a carbonate ester-based electrolyte without any additive, exhibiting boosted cycling and rate performances. The Li anode with a functional PVA-PAA hybrid interlayer can maintain the dense and smooth texture without dendrite formation after long cycles. The full cell of Li|LiFeO4 with our modified Li anode and a cathode with a high areal capacity of 2.45 mA h cm-2 delivers, change to achieved a long-term lifespan of 180 cycles at 1.0 C, with a capacity retention of 96.7%. This work demonstrates a simple and effective strategy of designing multi-functional artificial protective layers, targeting dendrite-free Li anodes.

Transport Layer Engineering by Hydrochloric Acid for Efficient Perovskite Solar Cells with a High Open-Circuit Voltage.

A large number of defect states that exist at the interface between a perovskite film and an electron transport layer (ETL) are detrimental to the efficiency and the stability of perovskite solar cells (PSCs). It is still a challenge to simultaneously passivate the defects on both sides by a stable and low-cost ion compound. Herein, we demonstrate a simple and effective versatile strategy by introducing hydrochloric acid into SnO2 precursor solution to passivate the defects in both SnO2 and perovskite layers and simultaneously reduce the interface energy barrier, ultimately achieving a high-performance and hysteresis-free PSCs. Hydrogen ions can neutralize -OH groups on the SnO2 surface, whereas the Cl- can not only combine with Sn4+ in ETL but also suppress the Pb-I antisite defects formed at the buried interface. The reduced nonradiative recombination and the favorable energy level alignment result in a significantly increased efficiency from 20.71 to 22.06% of PSCs due to the enhancement of open-circuit voltage. In addition, the stability of the device can also be improved. This work presents a facile and promising approach for the development of highly efficient PSCs.

Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6.

Multiferroic materials have great potential in non-volatile devices for low-power and ultra-high density information storage, owing to their unique characteristic of coexisting ferroelectric and ferromagnetic orders. The effective manipulation of their intrinsic anisotropy makes it promising to control multiple degrees of the storage "medium". Here, we have discovered intriguing in-plane electrical and magnetic anisotropies in van der Waals (vdW) multiferroic CuCrP2S6. The uniaxial anisotropies of current rectifications, magnetic properties and magnon modes are demonstrated and manipulated by electric direction/polarity, temperature variation and magnetic field. More important, we have discovered the spin-flop transition corresponding to specific resonance modes, and determined the anisotropy parameters by consistent model fittings and theoretical calculations. Our work provides in-depth investigation and quantitative analysis of electrical and magnetic anisotropies with the same easy axis in vdW multiferroics, which will stimulate potential device applications of artificial bionic synapses, multi-terminal spintronic chips and magnetoelectric devices.

The Positive Temperature Coefficient of Resistivity in BiFeO3 Films.

The use of lead-free ceramic film materials with positive temperature coefficient of resistivity (PTCR) is widespread in temperature heaters and sensors in micro-electromechanical systems. In this research, the out of plane transport properties of the BiFeO3 (BFO) films have been studied. Surprisingly, PTCR was found in the BFO ceramic films due to the strongly correlated interaction between the multiferroic material BFO and the superconductor YBCO perovskite oxides. To our knowledge, this is the first report on the PTCR effect of BFO films. The BFO/YBCO interface and the bulk conductivity of BFO are important for the PTCR effect, as they make it possible to compare the transport properties of Au/BFO/YBCO- and YBCO/BFO/YBCO-type structures. PTCR was observed in Au/BFO/YBCO at a bias voltage of more than 2 V, but not in the YBCO/BFO/YBCO, even with a 40 V bias voltage. PTCR was found after BFO breakdown of a YBCO/BFO/YBCO capacitor. This indicated that the conductivity of BFO is critical for PTCR. The dependence of PTCR on the superconducting transition temperature illustrates that a cooper-pair can be injected into BFO. Our work presents a method by which to produce a lead-free ceramic film material with PTCR.

Compact Full Ka-Band Waveguide Directional Coupler Based on Rectangular Aperture Array with Stairs.

This article presents a compact 3 dB waveguide directional coupler with full waveguide bandwidth. It consists of a pair of rectangular waveguides with stairs structures in the coupling region. The waveguides are placed parallel to each other along their broad wall, which has a rectangular aperture array. The compact size, broad bandwidth, good in-band coupling flatness, and good return loss are achieved by using the proposed structure. For verification purposes, a prototype of the proposed coupler was designed, manufactured, and measured. The experimental results show that over the full waveguide bandwidth a return loss of input port better than 17.46 dB, coupling strength varying between -2.74 dB and -3.80 dB, power-split unbalance within 0.76 dB, and an isolation better than 20.82 dB were obtained. The length of the coupling region was only 15.82 mm.

Multifunctional Sensing Based on an Ultrathin Transferrable Microring Laser.

An ultrathin-film microring laser was fabricated using inkjet printing and a simple lift-off technique. Whispering-gallery-mode lasing was observed under optically pumped conditions in the film. The freestanding laser can be transferred to arbitrary surfaces for multifunctional applications, such as acoustic and relative humidity sensing. Using the first eigenmode of a membrane vibration, an acoustic sensor with a 0.15 Pa limit of detection was demonstrated via laser bandwidth broadening. A relative humidity sensor with a 1.1% limit of detection via wavelength shifts was demonstrated by placing the device on an optical fiber facet. These cost-effective, transferrable, multifunctional laser sensors will have many additional applications.

Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge.

Topological Weyl semimetals have attracted considerable interest because they manifest underlying physics and device potential in spintronics. Large anomalous Hall effect (AHE) in non-collinear antiferromagnets (AFMs) represents a striking Weyl phase, which is associated with Bloch-band topological features. In this work, we report robust AHE and Lifshitz transition in high-quality Weyl semimetal Mn3Ge thin film, comprising stacked Kagome lattice and chiral antiferromagnetism. We successfully achieved giant AHE in our Mn3Ge film, with a strong Berry curvature enhanced by the Weyl phase. The enormous coercive field HC in our AHE curve at 5 K reached an unprecedented 5.3 T among hexagonal Mn3X systems. Our results provide direct experimental evidence of an electronic topological transition in the chiral AFMs. The temperature was demonstrated to play an efficient role in tuning the carrier concentration, which could be quantitatively determined by the two-band model. The electronic band structure crosses the Fermi energy level and leads to the reversal of carrier type around 50 K. The results not only offer new functionality for effectively modulating the Fermi level location in topological Weyl semimetals but also present a promising route of manipulating the carrier concentration in antiferromagnetic spintronic devices.

Tailoring Whispering Gallery Lasing and Random Lasing in A Compound Cavity.

A compound cavity was proposed to achieve both whispering gallery mode (WGM) lasing and random lasing. The WGM-random compound cavity consisted of a random structure with an annular boundary, which was fabricated by a method combining both inkjet printing and metal-assisted chemical etching methods. An ultrathin polymer membrane was attached to the WGM-random compound cavity, forming a polymer laser device. A transformation from WGM lasing to random lasing was observed under optical pumping conditions. The laser performance could be easily tailored by changing the parameter of the WGM-random compound cavity. These results provide a new avenue for the design of integrated light sources for sensing applications.

Effects of Organic Cations on the Structure and Performance of Quasi-Two-Dimensional Perovskite-Based Light-Emitting Diodes.

Quasi-two-dimensional (quasi-2D) perovskites are efficient luminescent materials due to their self-assembled quantum-well structure. We found that the organic cations have a significant effect on the structure and performance of quasi-2D perovskite-based light-emitting diodes (LEDs). Two classic organic cations, formamidinium (FA) and methylammonium (MA), were chosen for investigation. The MA-based quasi-2D perovskite has the largest band-gap n = 1 phase and a photoluminescence quantum yield (PLQY) as high as 85.3%, whereas this n = 1 phase is almost absent in the FA-based quasi-2D perovskite, which shows a moderate PLQY of 73.5%. However, the FA-based perovskite shows a much higher external quantum efficiency (15.4%) than the MA-based perovskite (0.93%) in LEDs. The lower electroluminescence efficiency of the MA-based perovskite could be ascribed to the poor hole injection. These results showed the importance of rational design of the quasi-2D perovskite for efficient LEDs.

A silicon-based quantum dot random laser.

Herein, a quantum dot random laser was achieved using a silicon nanowire array. The silicon nanowire array was grown by a metal-assisted chemical etching method. A colloidal quantum dot solution was spin-coated on silicon nanowires to form the random laser. The performance of the random laser was controlled by the resistivity of silicon wafers and the length of silicon nanowires. A transition from incoherent random lasing to coherent random lasing was obtained by increasing the resistivity of the silicon wafers. The random lasing threshold increased with an increase in the length of the silicon nanowires. These results may be useful to explore high-performance silicon-based random lasers.

Efficient green light-emitting diodes based on quasi-two-dimensional composition and phase engineered perovskite with surface passivation.

Perovskite light-emitting diodes (LEDs) are attracting great attention due to their efficient and narrow emission. Quasi-two-dimensional perovskites with Ruddlesden-Popper-type layered structures can enlarge exciton binding energy and confine charge carriers and are considered good candidate materials for efficient LEDs. However, these materials usually contain a mixture of phases and the phase impurity could cause low emission efficiency. In addition, converting three-dimensional into quasi-two-dimensional perovskite introduces more defects on the surface or at the grain boundaries due to the reduction of crystal sizes. Both factors limit the emission efficiency of LEDs. Here, firstly, through composition and phase engineering, optimal quasi-two-dimensional perovskites are selected. Secondly, surface passivation is carried out by coating organic small molecule trioctylphosphine oxide on the perovskite thin film surface. Accordingly, green LEDs based on quasi-two-dimensional perovskite reach a current efficiency of 62.4 cd A-1 and external quantum efficiency of 14.36%.

Author Correction: Efficient green light-emitting diodes based on quasi-two-dimensional composition and phase engineered perovskite with surface passivation.

The original version of this Article omitted an acknowledgement to the source of Fig. 1a. The following has been added to the end of the caption to Fig. 1: 'Figure 1a adapted from ref. 13 (copyright 2016 Macmillan Publishers)'. This has been corrected in the PDF and HTML versions of the Article.