RESUMEN
The high speed performance of a scanning probe microscope (SPM) is improved if a microelectromechanical systems (MEMS) device is employed for the out-of-plane scanning motion. We have carried out experiments with MEMS high-speed z-scanners (189 kHz fundamental resonance frequency) in both atomic force microscope and scanning tunneling microscope modes. The experiments show that with the current MEMS z-scanner, lateral tip speeds of 5 mm/s can be achieved with full feedback on surfaces with significant roughness. The improvement in scan speed, obtained with MEMS scanners, increases the possibilities for SPM observations of dynamic processes. Even higher speed MEMS scanners with fundamental resonance frequencies in excess of a megahertz are currently under development.
Asunto(s)
Sistemas Microelectromecánicos/instrumentación , Microscopía de Sonda de Barrido/instrumentación , Simulación por Computador , Diseño de Equipo , Retroalimentación , Análisis de Elementos Finitos , Microscopía de Fuerza Atómica/instrumentación , Microscopía Electrónica de Rastreo/instrumentación , Microscopía de Túnel de Rastreo/instrumentación , Movimiento (Física) , Factores de TiempoRESUMEN
Scanning probe microscopy is a frequently used nanometer-scale surface investigation technique. Unfortunately, its applicability is limited by the relatively low image acquisition speed, typically seconds to minutes per image. Higher imaging speeds are desirable for rapid inspection of samples and for the study of a range of dynamic surface processes, such as catalysis and crystal growth. We have designed a new high-speed scanning probe microscope (SPM) based on micro-electro mechanical systems (MEMS). MEMS are small, typically micrometer size devices that can be designed to perform the scanning motion required in an SPM system. These devices can be optimized to have high resonance frequencies (up to the MHz range) and have very low mass (10(-11)kg). Therefore, MEMS can perform fast scanning motion without exciting resonances in the mechanical loop of the SPM, and hence scan the surface without causing the image distortion from which conventional piezo scanners suffer. We have designed a MEMS z-scanner which we have integrated in commercial AFM (atomic force microscope) and STM (scanning tunneling microscope) setups. We show the first successful AFM experiments.
RESUMEN
We used polarized neutron reflectometry to determine the temperature dependence of the magnetization of thin AuFe films with 3% Fe concentration. We performed the measurements in a large magnetic field of 6 T in a temperature range from 295 to 2 K. For the films in the thickness range from 500 to 20 nm we observed a Brillouin-type behavior from 295 K down to 50 K and a constant magnetization of about 0.9 micro(B) per Fe atom below 30 K. However, for the 10 nm thick film we observed a Brillouin-type behavior down to 20 K and a constant magnetization of about 1.3 micro(B) per Fe atom below 20 K. These experiments are the first to show a finite-size effect in the magnetization of single spin-glass films in large magnetic fields. Furthermore, the ability to measure the deviation from the paramagnetic behavior enables us to prove the existence of the spin-glass state where other methods relying on a cusp-type behavior fail.
RESUMEN
We have developed a picovoltmeter using a Nb dc superconducting quantum interference device for measuring the flux-flow voltage from a small number of vortices moving through a submicron weak-pinning superconducting channel. We have applied this picovoltmeter to measure the vortex response in a single channel arranged in a circle on a Corbino disk geometry. The circular channel allows the vortices to follow closed orbits without encountering any sample edges, thus eliminating the influence of entry barriers.
RESUMEN
We have performed depth dependent muon-spin-rotation and -relaxation studies of the dynamics of single layer films of AuFe and CuMn spin glasses as a function of thickness and of its behavior as a function of distance from the vacuum interface (5-70 nm). A significant reduction in the muon-spin relaxation rate as a function of temperature with respect to the bulk material is observed when the muons are stopped near (5-10 nm) the surface of the sample. A similar reduction is observed for the whole sample if the thickness is reduced to, e.g., 20 nm and less. This reflects an increased impurity spin dynamics (incomplete freezing) close to the surface although the freezing temperature is only modestly affected by the dimensional reduction.