Morphology and Performance Enhancement through the Strong Passivation Effect of Amphoteric Ions in Tin-based Perovskite Solar Cells.

Despite the optoelectronic similarities between tin and lead halide perovskites, the performance of tin-based perovskite solar cells remains far behind, with the highest reported efficiency to date being ≈14%. This is highly correlated to the instability of tin halide perovskite, as well as the rapid crystallization behavior in perovskite film formation. In this work, l-Asparagine as a zwitterion plays a dual role in controlling the nucleation/crystallization process and improving the morphology of perovskite film. Furthermore, tin perovskites with l-Asparagine show more favorable energy-level matching, enhancing the charge extraction and minimizing the charge recombination, leading to an enhanced power conversion efficiency of 13.31% (from 10.54% without l-Asparagine) with remarkable stability. These results are also in good agreement with the density functional theory calculations. This work not only provides a facile and efficient approach to controlling the crystallization and morphology of perovskite film but also offers guidelines for further improved performance of tin-based perovskite electronic devices.

Enhanced Light Emission through Symmetry Engineering of Halide Perovskites.

Metal-halide perovskites (MHPs) have attracted tremendous attention as active materials in optoelectronic devices. For light-emitting diode (LED) applications, nanostructuring of MHPs is considered to be inevitable, but its light-enhancement mechanism is still elusive because the particle (or grain) size is often beyond the quantum confinement regime. As motivated by the experimental finding that the nanostructuring can change the preferred crystalline symmetry from the orthorhombic phase to the high-symmetric cubic phase, we here investigated the carrier dynamics in various polymorphic phases of CsPbBr3 using ab initio quantum dynamics simulation. We found that the cubic phase shows a smaller inelastic phonon scattering than the orthorhombic phase; the suppression of the octahedral tilt minimizes the longitudinal Br fluctuation and helps disentangle the A-site cation dynamics from the nonadiabatic carrier dynamics. We thus anticipate that our present work will offer a material design principle to enhance the quantum yield of MHPs via symmetry engineering, which will help develop highly luminescent LED technology based on MHPs.

Fabrication of Colloidal Cesium Metal Halide (CsMX: M = Fe, Co, and Ni) Nanoparticles and Assessment of Their Thermodynamic Stability by DFT Calculations.

We synthesized colloidal cesium metal halide CsMX (M = Fe, Co, Ni; X = Cl, Br) nanoparticles (NPs) and assessed their crystal stability by density functional theory (DFT) calculations. We successfully synthesized Cs3FeCl5, Cs3FeBr5, Cs3CoCl5, Cs3CoBr5, CsNiCl3, and CsNiBr3 NPs. CsMX NPs with Fe and Co exhibited Cs3M1X5 and Cs2M1X4 structures depending on the reaction conditions; however, CsNiX NPs exhibited only the CsNiX3 structure. The differences in structural stability by central metal ions were explained using spin-polarized DFT calculations. The analysis revealed tetragonal Cs3M1X5 and orthorhombic Cs2M1X4 structures to have similar thermodynamic stabilities in the case of Fe and Co, whereas the hexagonal CsMX3 structure in the case of Ni was the most stable. Moreover, the calculation results were the same as the experimental results. In particular, cobalt-related Cs3CoBr5 NPs easily developed into Cs2CoCl4 nanorods with an increase in temperature.

High-throughput screening of perovskite inspired bismuth halide materials: toward lead-free photovoltaic cells and light-emitting diodes.

Toxicity is the main bottleneck for the commercialization of Pb halide perovskites. Bi has been considered a promising metal cation to replace Pb because of its comparable electronic structures with Pb and better stability. Although experimental and theoretical studies have proposed various Bi-based halides, the present achievements in photovoltaic cells and other photoelectronic device fields do not compete with Pb analogs. Thermodynamic stability, bandgap control, and enhancement of carrier transport are fundamental challenges in the context of intrinsic material properties for developing highly efficient Bi-based devices. This study evaluates the potential of Bi-based halide compounds with good stability and electronic properties through high-throughput density functional theory calculations. Lattice structures and compositions are selected based on previous reports and an open material database. Then, we expanded our dataset to cover all possible compositional variations of A- and X-sites and alloying to B-sites. We examined over six-hundred candidates and found ten new candidates that have not been reported previously. Rb3SbBiI9exhibits the best-expected efficiency for high-efficiency solar cells among selected compounds, and other compounds can be used as visible-light-generation sources. Analysis of the screening procedure revealed that vacancy-ordered (A3B2X9)-type Bi-halides exhibit significantly favorable characteristics when compared with those of double perovskites and rudorffite-like structures for Bi-based photoelectronic devices.

Understanding of the formation of shallow level defects from the intrinsic defects of lead tri-halide perovskites.

Organic-inorganic hybrid perovskites have unique electronic properties in which deep level defects are rarely formed. This unique defect characteristic is the source of the long carrier diffusion length. This theoretical study shows what causes this characteristic formation of shallow level defects in lead tri-halide perovskites. Comparative studies between iodides and other halides showed that deep level defect states were generated for Cl based perovskites. Longer Pb-halide bond lengths and narrower band gaps are beneficial for preventing deep level defect states. Additionally, our study shows that the formation of shallow level defects does not change even when the lattice structures of the perovskites do not reach their equilibrium structures.

Systematic analysis of the unique band gap modulation of mixed halide perovskites.

Solar cells based on organic-inorganic hybrid metal halide perovskites have been proven to be one of the most promising candidates for the next generation thin film photovoltaic cells. Mixing Br or Cl into I-based perovskites has been frequently tried to enhance the cell efficiency and stability. One of the advantages of mixed halides is the modulation of band gap by controlling the composition of the incorporated halides. However, the reported band gap transition behavior has not been resolved yet. Here a theoretical model is presented to understand the electronic structure variation of metal mixed-halide perovskites through hybrid density functional theory. Comparative calculations in this work suggest that the band gap correction including spin-orbit interaction is essential to describe the band gap changes of mixed halides. In our model, both the lattice variation and the orbital interactions between metal and halides play key roles to determine band gap changes and band alignments of mixed halides. It is also presented that the band gap of mixed halide thin films can be significantly affected by the distribution of halide composition.

Atomistic study on dopant-distributions in realistically sized, highly P-doped Si nanowires.

The dependency of dopant-distributions on channel diameters in realistically sized, highly phosphorus-doped silicon nanowires is investigated with an atomistic tight-binding approach coupled to self-consistent Schrödinger-Poisson simulations. By overcoming the limit in channel sizes and doping densities of previous studies, this work examines electronic structures and electrostatics of free-standing circular silicon nanowires that are phosphorus-doped with a high density of ∼ 2 × 10(19) cm(-3) and have 12 nm-28 nm cross-sections. Results of analysis on the channel energy indicate that the uniformly distributed dopant profile would be hardly obtained when the nanowire cross-section is smaller than 20 nm. Insufficient room to screen donor ions and shallower impurity bands are the primary reasons of the nonuniform dopant-distributions in smaller nanowires. Being firmly connected to the recent experimental study (Proc. Natl. Acad. Sci. U.S.A. 2009, 106, 15254-15258), this work establishes the first theoretical framework for understanding dopant-distributions in over-10 nm highly doped silicon nanowires.

Retarded dopant diffusion by moderated dopant-dopant interactions in Si nanowires.

The retarded dopant diffusion in Si nanostructures is investigated using the first principles calculation. It is presented that weak dopant-dopant interaction energy (DDIE) in nanostructures is responsible for the suppressed dopant diffusion in comparison with that in bulk Si. The DDIE is significantly reduced as the diameter of the Si nanowire becomes smaller. The mechanical softening and quantum confinement found in nanostructures are the physical origin for the small interaction energy. Reduced dopant-dopant interaction slows down the diffusion process from heavily doped regions to undoped regions. Thus, we suggest that an additional annealing process is indispensable to make a desired dopant profile in the nanoscale semiconductor devices.

Asymmetric doping in silicon nanostructures: the impact of surface dangling bonds.

We investigate peculiar dopant deactivation behaviors of Si nanostrucures with first principle calculations and reveal that surface dangling bonds (SDBs) on Si nanostructures could be fundamental obstacles in nanoscale doping. In contrast to bulk Si, as the size of Si becomes smaller, SDBs on Si nanostructures prefer to be charged and asymmetrically deactivate n- and p-type doping. The asymmetric dopant deactivation in Si nanostructures is ascribed to the preference for negatively charged SDBs as a result of a larger quantum confinement effect on the conduction band. On the basis of our results, we show that the control of the growth direction of silicon nanowire as well as surface passivation is very important in preventing dopant deactivation.

Simultaneous Enhanced Efficiency and Stability of Perovskite Solar Cells Using Adhesive Fluorinated Polymer Interfacial Material.

For enhancing the performance and long-term stability of perovskite solar cell (PSC) devices, interfacial engineering between the perovskite and hole-transporting material (HTM) is important. We developed a fluorinated conjugated polymer PFPT3 and used it as an interfacial layer between the perovskite and HTM layers in normal-type PSCs. Interaction of perovskite and PFPT3 via Pb-F bonding effectively induces an interfacial dipole moment, which resulted in energy-level bending; this was favorable for charge transfer and hole extraction at the interface. The PSC device achieved an increased efficiency of 22.00% with an open-circuit voltage of 1.13 V, short-circuit current density of 24.34 mA/cm2, and fill factor of 0.80 from a reverse scan and showed an averaged power conversion efficiency of 21.59%, which was averaged from forward and reverse scans. Furthermore, the device with PFPT3 showed much improved stability under an 85% RH condition because hydrophobic PFPT3 reduced water permeation into the perovskite layer, and more importantly, the enhanced contact adhesion at the PFPT3-mediated perovskite/HTM interface suppressed surface delamination and retarded water intrusion. The fluorinated conjugated polymeric interfacial material is effective for improving not only the efficiency but also the stability of the PSC devices.

Dual-site mixed layer-structured FA x Cs3-x Sb2I6Cl3 Pb-free metal halide perovskite solar cells.

Structure engineering of trivalent metal halide perovskites (MHPs) such as A3Sb2X9 (A = a monovalent cation such as methyl ammonium (MA), cesium (Cs), and formamidinium (FA) and X = a halogen such as I, Br, and Cl) is of great interest because a two dimensional (2D) layer structure with direct bandgap has narrower bandgap energy than a zero dimensional (0D) dimer structure with indirect bandgap. Here, we demonstrated 2D layer structured FACs2Sb2I6Cl3 MHP by dual-site (A and X site) mixing. Thanks to the lattice-symmetry change by I-Cl mixed halide, the shortest ionic radius of Cs, and the lower solution energy due to dual-site mixing, the FACs2Sb2I6Cl3 MHP had 2D layer structure and thereby the MHP solar cells exhibited improved short-circuit current density.

Phase Selection of Cesium Lead Triiodides through Surface Ligand Engineering.

The cesium lead triiodide (CsPbI3) perovskite is a promising candidate for stable light absorbers and red-light-emitting sources due to its outstanding stability. Phase engineering is the most important approach for the commercialization of CsPbI3 because the optically inactive nonperovskite structure is more stable than three-dimensional (3-D) perovskite lattices at ambient temperature. This study presents an in-depth evaluation to find the optimum surface ligand and to reveal the mechanism of phase stabilization by surface ligands. Thermodynamic evaluations combined with density functional theory calculations indicate the criteria for forming stable 3-D CsPbI3 perovskites under surface and volume free energy competition between perovskite and nonperovskite phases. Comparative calculations for ammonium, alcohol, and thiol groups show that ammonium groups enhance the phase stability of 3-D perovskites the most. In addition, ammonium-passivated CsPbI3 is relatively robust against defect formation and H2O adsorption.

Role of Quantum Confinement in 10 nm Scale Perovskite Optoelectronics.

Quantum confinement-driven band structure engineering of metal halide perovskites (MHPs) is examined for realistically sized structures that consist of up to 105 atoms. The structural and compositional effects on band gap energies are simulated for crystalline CH3NH3PbX3 (X = I/Br/Cl) with a tight-binding approach that has been well-established for electronic structure calculations of multimillion atomic systems. Solid maps of band gap energies achievable with quantum dots, nanowires, and nanoplatelets concerning sizes, shapes, and halide compositions are presented, which should be informative to experimentalists for band gap designs. The pathway to suppress band gap instability that appeared in mixed halide perovskites is proposed, revealing that the red shift induced by halide phase separation can be hugely diminished by reducing sizes and adopting halides of lower electronegativity. Our modeling results on finite MHP structures of over 10 nm dimensions show a blueprint for designs of stable light-emitting sources with precisely controlled wavelengths.

Data on lateral collection length of charge carriers depending on pre-white-light soaking process for metal mesh transparent electrode based Cu(In,Ga)Se2 solar cells.

The authors have recently reported silver nanowire based Cu(In,Ga)Se2 solar cells [1,2]. Metal mesh based transparent electrodes other than the silver nanowire can be also employed or have a potential to provide a better performance for the solar cells. To select a suitable electrode for a solar cell among metal meshes, it is required to have data on the lateral collection length of charge carriers in the targeted cell. The method to determine the lateral collection has been reported in our previous publication [3]. Here, we report data on the effect of the light intensity during pre-white-light soaking on the lateral charge collection length for metal mesh transparent electrode based Cu(In,Ga)Se2 solar cells.

Roles of SnX2 (X = F, Cl, Br) Additives in Tin-Based Halide Perovskites toward Highly Efficient and Stable Lead-Free Perovskite Solar Cells.

Preserving the stability of Sn-based halide perovskites is a primary concern in developing photovoltaic light-absorbing materials for lead-free perovskite solar cells. Whereas the addition of SnX2 (X = F, Cl, Br) has been demonstrated to improve the photovoltaic performance of Sn halide perovskite solar cells, the mechanistic roles of SnX2 in the performance enhancement have not yet been studied appropriately. Here we perform a comparative study of CsSnI3 films and devices and examine how SnX2 additives affect their stability, and the results are corroborated by first-principles-based theoretical calculations. Unlike the conventional belief that the additives annihilate defects, we find that the additives effectively passivate the surface and stabilize the perovskite phase, promoting the stability of CsSnI3. Our mechanism suggests that SnBr2, which shows ca. 100 h of prolonged stability along with a high power conversion efficiency of 4.3%, is the best additive for enhancing the stability of CsSnI3.

Mixed Valence Perovskite Cs2 Au2 I6 : A Potential Material for Thin-Film Pb-Free Photovoltaic Cells with Ultrahigh Efficiency.

New light is shed on the previously known perovskite material, Cs2 Au2 I6 , as a potential active material for high-efficiency thin-film Pb-free photovoltaic cells. First-principles calculations demonstrate that Cs2 Au2 I6 has an optimal band gap that is close to the Shockley-Queisser value. The band gap size is governed by intermediate band formation. Charge disproportionation on Au makes Cs2 Au2 I6 a double-perovskite material, although it is stoichiometrically a single perovskite. In contrast to most previously discussed double perovskites, Cs2 Au2 I6 has a direct-band-gap feature, and optical simulation predicts that a very thin layer of active material is sufficient to achieve a high photoconversion efficiency using a polycrystalline film layer. The already confirmed synthesizability of this material, coupled with the state-of-the-art multiscale simulations connecting from the material to the device, strongly suggests that Cs2 Au2 I6 will serve as the active material in highly efficient, nontoxic, and thin-film perovskite solar cells in the very near future.

Thermoelectric materials by using two-dimensional materials with negative correlation between electrical and thermal conductivity.

In general, in thermoelectric materials the electrical conductivity σ and thermal conductivity κ are related and thus cannot be controlled independently. Previously, to maximize the thermoelectric figure of merit in state-of-the-art materials, differences in relative scaling between σ and κ as dimensions are reduced to approach the nanoscale were utilized. Here we present an approach to thermoelectric materials using tin disulfide, SnS2, nanosheets that demonstrated a negative correlation between σ and κ. In other words, as the thickness of SnS2 decreased, σ increased whereas κ decreased. This approach leads to a thermoelectric figure of merit increase to 0.13 at 300 K, a factor ∼1,000 times greater than previously reported bulk single-crystal SnS2. The Seebeck coefficient obtained for our two-dimensional SnS2 nanosheets was 34.7 mV K(-1) for 16-nm-thick samples at 300 K.

The Role of Intrinsic Defects in Methylammonium Lead Iodide Perovskite.

One of the major merits of CH3NH3PbI3 perovskite as an efficient absorber material for the photovoltaic cell is its long carrier lifetime. We investigate the role of the intrinsic defects of CH3NH3PbI3 on its outstanding photovoltaic properties using density-functional studies. Two types of defects are of interest, i.e., Schottky defects and Frenkel defects. Schottky defects, such as PbI2 and CH3NH3I vacancy, do not make a trap state, which can reduce carrier lifetime. Elemental defects like Pb, I, and CH3NH3 vacancies derived from Frenkel defects act as dopants, which explains the unintentional doping of methylammonium lead halides (MALHs). The absence of gap states from intrinsic defects of MALHs can be ascribed to the ionic bonding from organic-inorganic hybridization. These results explain why the perovskite MALHs can be an efficient semiconductor, even when grown using simple solution processes. It also suggests that the n-/p-type can be efficiently manipulated by controlling growth processes.

A Pathway to Type-I Band Alignment in Ge/Si Core-Shell Nanowires.

We investigate the electronic band structures of Ge/Si core-shell nanowires (CSNWs) and devise a way to realize the electron quantum well at Ge core atoms with first-principles calculations. We reveal that the electronic band engineering by the quantum confinement and the lattice strain can induce the type-I/II band alignment transition, and the resulting type-I band alignment generates the electron quantum well in Ge/Si CSNWs. We also find that the type-I/II transition in Ge/Si CSNWs is highly related to the direct to indirect band gap transition through the analysis of charge density and band structures. In terms of the quantum confinement, for [100] and [111] directional Ge/Si CSNWs, the type-I/II transition can be obtained by decreasing the diameters, whereas a [110] directional CSNW preserves the type-II band alignment even at diameters as small as 1 nm. By applying a compressive strain on [110] CSNWs, the type-I band alignment can be formed. Our results suggest that Ge/Si CSNWs can have the type-I band alignment characteristics by the band structure engineering, which enables both n-type and p-type quantum-well transistors to be fabricated using Ge/Si CSNWs for high-speed logic applications.

Biodegradability engineering of biodegradable Mg alloys: tailoring the electrochemical properties and microstructure of constituent phases.

Crystalline Mg-based alloys with a distinct reduction in hydrogen evolution were prepared through both electrochemical and microstructural engineering of the constituent phases. The addition of Zn to Mg-Ca alloy modified the corrosion potentials of two constituent phases (Mg + Mg2Ca), which prevented the formation of a galvanic circuit and achieved a comparable corrosion rate to high purity Mg. Furthermore, effective grain refinement induced by the extrusion allowed the achievement of much lower corrosion rate than high purity Mg. Animal studies confirmed the large reduction in hydrogen evolution and revealed good tissue compatibility with increased bone deposition around the newly developed Mg alloy implants. Thus, high strength Mg-Ca-Zn alloys with medically acceptable corrosion rate were developed and showed great potential for use in a new generation of biodegradable implants.