Demonstration of Efficient Ultrathin Side-Emitting InGaN/GaN Flip-Chip Light-Emitting Diodes by Double Side Reflectors.

This work proposes an InGaN/GaN multiple-quantum-well flip-chip blue ultrathin side-emitting (USE) light-emitting diode (LED) and describes the sidewall light emission characteristics for the application of backlight units in display technology. The USE-LEDs are fabricated with top (ITO/distributed Bragg reflector) and bottom (Ag) mirrors that cause light emission from the four sidewalls in a lateral direction. The effect of light output power (LOP) on lateral direction is consistently investigated for improving the optoelectronic performances of USE-LEDs. Initially, the reference USE-LED suffers from very low LOP because of poor light extraction efficiency (LEE). Therefore, the LEE is improved by fabricating ZnO nanorods at each sidewall through hydrothermal method. The effects of ZnO nanorod lengths and diameters on LOP are systematically investigated for optimizing the dimensions of ZnO nanorods. The optimized ZnO nanorods improve the LEE of USE-LED, which thus results in increasing the LOP > 80% compared to the reference LED. In addition, the light-tools simulator is also used for elucidating the increase in LEE of ZnO nanorods USE-LED.

32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication.

This work proposes the use of integrated high-power InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diode (µ-LED) arrays on an AlGaN/GaN-based heterojunction field-effect transistor (HFET), also known as a high electron mobility transistor (HEMT), for various applications: underwater wireless optical communication (UWOC) and smart lighting. Therefore, we demonstrate high-power µ-LED-on-HEMT arrays that consist of 32 × 32 pixelated µ-LED arrays and 32 × 32 pixelated HEMT arrays and that are interconnected by a solder bump bonding technique. Each pixel of the µ-LED arrays emits light in the HEMT on-state. The threshold voltage, the off-state leakage current, and the drain current of the HEMT arrays are -4.6 V, <~1.1 × 10-9 A at gate-to-source voltage (VGS) = -10 V, and 21 mA at VGS = 4 V, respectively. At 12 mA, the forward voltage and the light output power (LOP) of µ-LED arrays are ~4.05 V and ~3.5 mW, respectively. The LOP of the integrated µ-LED-on-HEMT arrays increases from 0 to ~4 mW as the VGS increases from -6 to 4 V at VDD = 10 V. Each pixel of the integrated µ-LEDs exhibits a modulated high LOP at a peak wavelength of ~450 nm, showing their potential as candidates for use in UWOC.

Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation.

We investigate the cause of the optoelectronic performance variations in InGaN/GaN multiple-quantum-well blue light-emitting diodes, using three different samples from an identical wafer grown on a c-plane sapphire substrate. Various macroscopic measurements have been conducted, revealing that with increasing strain in the quantum wells (QWs), the crystal quality improves with an increasing peak internal quantum efficiency while the droop becomes more severe. We propose to explain these variations using a model where the in-plane local potential fluctuation in QWs is considered. Our work is contrasted with prior works in that macroscopic measurements are utilized to find clues on the microscopic changes and their impacts on the device performances, which has been rarely attempted.