Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 2 de 2
Filtrar
Más filtros

Banco de datos
Tipo de estudio
Tipo del documento
Intervalo de año de publicación
1.
Nano Lett ; 20(1): 88-94, 2020 Jan 08.
Artículo en Inglés | MEDLINE | ID: mdl-31851827

RESUMEN

Flexoelectricity is especially relevant for nanoscale structures, and it is expected to be largest at the tip of cracks. We demonstrate the presence of a huge flexoelectric polarization at crack tips in SrTiO3 by direct observation with scanning transmission electron microscopy. We observe an averaged polarization of 62 ± 16 µC cm-2 in the three unit cells adjacent to the crack tip, which is one of the largest flexoelectric polarizations ever reported. The polarization is screened by an electron density of 0.7 ± 0.1 e-/uc localized within one unit cell. These findings reveal the relevance of flexoelectricity for the science of crack formation and propagation.

2.
ACS Nano ; 14(10): 12697-12707, 2020 Oct 27.
Artículo en Inglés | MEDLINE | ID: mdl-32910642

RESUMEN

The last three decades have seen a growing trend toward studying the interfacial phenomena in complex oxide heterostructures. Of particular concern is the charge distribution at interfaces, which is a crucial factor in controlling the interface transport behavior. However, the study of the charge distribution is very challenging due to its small length scale and the intricate structure and chemistry at interfaces. Furthermore, the underlying origin of the interfacial charge distribution has been rarely studied in-depth and is still poorly understood. Here, by a combination of aberration-corrected scanning transmission electron microscopy (STEM) and spectroscopy techniques, we identify the charge accumulation in the SrMnO3 (SMO) side of SrMnO3/SrTiO3 heterointerfaces and find that the charge density attains the maximum of 0.13 ± 0.07 e-/unit cell (uc) at the first SMO monolayer. Based on quantitative atomic-scale STEM analyses and first-principle calculations, we explore the origin of interfacial charge accumulation in terms of epitaxial strain-favored oxygen vacancies, cationic interdiffusion, interfacial charge transfer, and space-charge effects. This study, therefore, provides a comprehensive description of the charge distribution and related mechanisms at the SMO/STO heterointerfaces, which is beneficial for the functionality manipulation via charge engineering at interfaces.

SELECCIÓN DE REFERENCIAS
DETALLE DE LA BÚSQUEDA