Room temperature fabrication of ZnO/ST-cut quartz SAW UV photodetector with small temperature coefficient.

Room-temperature fabricated ZnO/ST-cut quartz is adopted for SAW ultraviolet (UV) photodetector. The ST-cut quartz substrate and ZnO layer are used for SAW excitation and photodetection, respectively. High resolution x-ray diffraction (XRD) and photoluminescence (PL) measurement indicate that high quality ZnO films can be deposited on ST-cut quartz using radio frequency (RF) sputtering. As the SAW devices under UV illumination (6 mW/cm(2)), a downshift in frequency of about 35 KHz can be observed. The observed small temperature coefficient of frequency (TCF) indicates that SAW devices exhibit good temperature stability. The results present feasibility of using ZnO/ST-cut quartz SAW photodetectors in ultraviolet region.

Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors.

Epitaxial AlN films were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300 degrees C. Surface acoustic wave (SAW) devices fabricated on AlN/GaN/sapphire exhibited superior characteristics compared with those made on GaN/sapphire. An oscillator using an AlN/GaN/sapphirebased SAW device is presented. The oscillation frequency decreased when the device was illuminated by ultraviolet (UV) radiation, and the downshift of the oscillation frequency increased with the illuminating UV power density. The results showed that the AlN/GaN/sapphire-layered structure SAW oscillators are suitable for visible blind UV detection and opened up the feasibility of developing remote UV sensors for different ranges of wavelengths on the III-nitrides.

Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire.

Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.

Deep-UV sensors based on SAW oscillators using low-temperature-grown AlN films on sapphires.

High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators.