Improved Heat Dissipation of High-Power LED Lighting by a Lens Plate with Thermally-Conductive Plastics.

The junction temperature of high-power LED lighting was reduced effectively using a lens plate made from a thermally-conductive plastics (TCP). TCP has an excellent thermal conductivity, approximately 5 times that of polymethylmethacrylate (PMMA). Two sets of high-power LED lighting were designed using a multi array LED package with a lens plate for thermal simulation. The difference between two models was the materials of the lens plate. The lens plates of first and second models were fabricated by PMMA (PMMA lighting) and TCP (TCP lighting), respectively. At the lens plate, the simulated temperature of the TCP lighting was higher than that of the PMMA lighting. Near the LED package, the temperature of the TCP lighting was 2 °C lower than that of the PMMA lighting. This was well matched with the measured temperature of the fabricated lighting with TCP and PMMA.

Influence of the Thermal Conductivity of Thermally Conductive Plastics on the Thermal Distribution of an Light-Emitting Diode Headlight for Vehicles.

This paper investigates the thermal distribution of an LED headlight for vehicles based on the thermal conductivity of thermally conductive plastics (TCP). In general, heat dissipation structures used for LED headlights are made from metallic materials. However, headlight structures made from TCP have not been investigated. The headlights made from TCP having a various thermal conductivity were fabricated by injection molding with and without a metal plate insert. The temperature characteristics were compared and analyzed using thermal simulations and measurement. The inserted metal in TCP greatly reduced the temperature at solder point, indicating that the fast heat dissipation from the high power LED package to TCP though the inserted metal is essential. The measured temperature at solder points decreased as the thermal conductivity of TCP increased, which is well matched to the simulation results. The measured temperature at the solder point was lower than 150 °C when the thermal conductivity of the TCP was 10 W/mK.

Opposite Behavior of Multilayer Graphene/ Indium-Tin-Oxide p-Electrode for Gallium Nitride Based-Light Emitting Diodes Depending on Thickness of Indium-Tin-Oxide Layer.

In order to improve EQE, we have investigated on the role of multilayer graphene (MLG) on the electrical and optical properties of GaN based light-emitting diodes (LEDs) with ultrathin ITO (5 nm or 10 nm)/p-GaN contacts. The MLG was transferred on the ITO/p-GaN to decrease sheet resistance of thin ITO p-electrode and improve the current spreading of LEDs. The LEDs with the ITO 5 nm and MLG/ITO 5 nm structures showed 3.25 and 3.06 V at 20 mA, and 11.69 and 13.02 mW/sr at 400 mA, respectively. After forming MLG on ITO 5 nm, the electro-optical properties were enhanced. Furthermore, the GaN based-LEDs applied to the ITO 10 nm, and MLG/ITO (10 nm) structures showed 2.95 and 3.06 V at 20 mA, and 20.28 and 16.74 mW/sr at 400 mA, respectively. The sheet resistance of the MLG transferred to ITO 5 nm was decreased approximately four fold compared to ITO 5 nm. On the other hand, the ITO 10 nm and MLG/ITO 10 nm showed a similar sheet resistance; the transmittance of the LEDs with ITO 10 nm decreased to 16% due to MLG formation on ITO. This suggests that the relationship between the sheet resistance and transmittance according to the ITO film thickness affected the electro-optical properties of the LEDs with a transparent p-electrode with the MLG/ITO dual structure.

Improvement of disturbing color effects depending on the axial color of an automotive headlamp lens.

Light-emitting diodes (LEDs) are causing big changes in the automotive lighting field. Optical systems with LEDs can use a plastic lens, which means almost all shapes can be made through plastic injection molding. Already, some car manufacturers are adopting this technology in their designs to express their own identities to customers. However, to use this technology, an important defect has to be overcome, which is color aberration near the cutoff line of the low-beam. In this paper, the criteria for measuring the color coordinates are established and simulations for axial color aberration in the plastic lens are carried out.

Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes.

We study light-extraction efficiency (LEE) of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) using flip-chip (FC) devices with varied thickness in remaining sapphire substrate by experimental output power measurement and computational methods using 3-dimensional finite-difference time-domain (3D-FDTD) and Monte Carlo ray-tracing simulations. Light-output power of DUV-FCLEDs compared at a current of 20 mA increases with thicker sapphire, showing higher LEE for an LED with 250-µm-thick sapphire by ~39% than that with 100-µm-thick sapphire. In contrast, LEEs of visible FCLEDs show only marginal improvement with increasing sapphire thickness, that is, ~6% improvement for an LED with 250-µm-thick sapphire. 3D-FDTD simulation reveals a mechanism of enhanced light extraction with various sidewall roughness and thickness in sapphire substrates. Ray tracing simulation examines the light propagation behavior of DUV-FCLED structures. The enhanced output power and higher LEE strongly depends on the sidewall roughness of the sapphire substrate rather than thickness itself. The thickness starts playing a role only when the sapphire sidewalls become rough. The roughened surface of sapphire sidewall during chip-separation process is critical for TM-polarized photons from AlGaN quantum wells to escape in lateral directions before they are absorbed by p-GaN and Au-metal. Furthermore, the ray tracing results show a reasonably good agreement with the experimental result of the LEE.

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods.

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes (LEDs). In this paper, we report the suppression of efficiency droop induced by the process of density-activated defect recombination in nanorod structures of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that such improvement is a net effect that the lateral carrier confinement overcomes the increased surface trapping introduced during fabrication.

Structural and optical investigation of GaInP quantum dots according to the growth thickness for the 700 nm light emitters.

We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating a Stranski-Krastanov growth mode. As the ambient temperature is increased to 300 K, the PL spectrum of the B-type dots is annihilated quickly because the large dot size induces a defect-related nonradiative recombination process. In contrast, the PL spectrum of the A-type dots is well maintained to 300 K. These data indicate that the Ga0.33In0.67P material is appropriate for an active layer of 700 nm light emitters.

Effects of reduced exciton diffusion in InGaN/GaN multiple quantum well nanorods.

We investigate the effects of reduced exciton diffusion on the emission properties in InGaN/GaN multiple-quantum-well nanorods. Time-resolved photoluminescence spectra are recorded and compared in dry-etched InGaN/GaN nanorods and parent multiple quantum wells at various temperatures with carrier density in different regimes. Faster carrier recombination and absence of delayed rise in the emission dynamics are found in nanorods. Many effects, including surface damages and partial relaxation of the strain, may cause the faster recombination in nanorods. Together with these enhanced carrier recombination processes, the reduced exciton diffusion may induce the different temperature-dependent emission dynamics characterized by the delayed rise in time-resolved photoluminescence spectra.

Nonradiative energy transfer between colloidal quantum dot-phosphors and nanopillar nitride LEDs.

We present in this communication our study of the nonradiative energy transfer between colloidal quantum dot (QD) phosphors and nitride nanopillar light emitting diodes (LEDs). An epitaxial p-i-n InGaN/GaN multiple quantum-well (QW) heterostructure was patterned and dry-etched to form dense arrays of nanopillars using a novel etch mask consisting of self-assembled In3Sn clusters. Colloidal QD phosphors have been deposited into the gaps between the nanopillars, leading to sidewall coupling between the QDs and InGaN QW emitters. In this approach, close QW-QD contact and a low-resistance design of the LED contact layer were achieved simultaneously. Strong non-radiative energy transfer was observed from the InGaN QW to the colloidal QD phosphors, which led to a 263% enhancement in effective internal quantum efficiency for the QDs incorporated in the nanopillar LEDs, as compared to those deposited over planar LED structures. Time-resolved photoluminescence was used to characterize the energy transfer process between the QW and QDs. The measured rate of non-radiative QD-QW energy-transfer agrees well with the value calculated from the quantum efficiency data for the QDs in the nanopillar LED.

InGaN-based nano-pillar light emitting diodes fabricated by self-assembled ITO nano-dots.

InGaN/GaN based nano-pillar light emitting diodes (LEDs) with a diameter of 200-300 nm and a height of 500 nm are fabricated by inductively coupled plasma etching using self-assembled ITO nano-dots as etching mask, which were produced by wet etching of the as-deposited ITO films. The peak PL intensity of the nano-pillar LEDs was significantly higher than that of the as-grown planar LEDs, which can be attributed to the improvement of external quantum efficiency of the nano-pillar LEDs due to the large sidewall of the nano-pillars. We have also demonstrated electrical pumping of the InGaN/GaN based nano-pillar LEDs with a self-aligned TiO2 layer as a passivation of sidewall of the nano-pillars.

Failure analysis of InGaN/GaN high power light-emitting diodes fabricated with ITO transparent p-type electrode during accelerated electro-thermal stress.

We have investigated the high-temperature degradation of optical power as well as electrical properties of InGaN/GaN light-emitting diodes (LEDs) fabricated with ITO transparent p-electrode during accelerated electro-thermal stress. As the thermal stress increased from 150 degrees C to 250 degrees C at a electrical stress of 200 mA, the optical power of the LEDs was significantly reduced. Degradation of the optical power was thermally activated, with the activation of 0.9 eV. In addition, the activation energy of the degradation of optical power was fairly similar to that of the degradation of series resistance of the LEDs, 1.0 eV, which implies that the increase in the series resistance may result in the severe degradation of optical power. We also showed that the increase in the series resistance of the LEDs during the accelerated electro-thermal stress can be attributed to reduction of the active acceptor concentration in the p-type semiconductor layers and local joule heating due to the current crowding.

Demonstration of Efficient Ultrathin Side-Emitting InGaN/GaN Flip-Chip Light-Emitting Diodes by Double Side Reflectors.

This work proposes an InGaN/GaN multiple-quantum-well flip-chip blue ultrathin side-emitting (USE) light-emitting diode (LED) and describes the sidewall light emission characteristics for the application of backlight units in display technology. The USE-LEDs are fabricated with top (ITO/distributed Bragg reflector) and bottom (Ag) mirrors that cause light emission from the four sidewalls in a lateral direction. The effect of light output power (LOP) on lateral direction is consistently investigated for improving the optoelectronic performances of USE-LEDs. Initially, the reference USE-LED suffers from very low LOP because of poor light extraction efficiency (LEE). Therefore, the LEE is improved by fabricating ZnO nanorods at each sidewall through hydrothermal method. The effects of ZnO nanorod lengths and diameters on LOP are systematically investigated for optimizing the dimensions of ZnO nanorods. The optimized ZnO nanorods improve the LEE of USE-LED, which thus results in increasing the LOP > 80% compared to the reference LED. In addition, the light-tools simulator is also used for elucidating the increase in LEE of ZnO nanorods USE-LED.

Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth.

We have demonstrated that the light extraction efficiency of the InGaN based multi-quantum well light-emitting diodes (LEDs) can be improved by using a single die growth (SDG) method. The SDG was performed by patterning the n-GaN and sapphire substrate with a size of single chip (600 x 250 microm2) by using a laser scriber, followed by the regrowth of the n-GaN and LED structures on the laser patterned n-GaN. We fabricated lateral LED chips having the SDG structures (SDG-LEDs), in which the thickness of the regrown n-GaN was varied from 2 to 6 microm. For comparison, we also fabricated conventional LED chips without the SDG structures. The SDG-LEDs showed lower operating voltage when compared to the conventional LEDs. In addition, the output power of the SDG-LEDs was significantly higher than that of the conventional LEDs. From optical ray tracing simulations, the increase in the thickness and sidewall angle of the regrown n-GaN and LED structures may enhance photon escapes from the tilted facets of the regrown n-GaN, followed by the increase in light output power and extraction efficiency of the SDG-LEDs.

Optimization of the number of quantum well pairs for high-brightness AlGaLnP-based light emitting diodes.

We investigated high-brightness light emitting diodes (LEDs) appropriate for general lighting applications in terms of their temperature dependent photoluminescence characteristics and device performance according to the change of quantum well pairs (QWs). As the number of QWs was increased from 2 to 35 pairs, radiative recombination efficiency and device performances significantly improved, due to the suppression of carrier overflow by decreasing the carrier density in the active region and shortening the carrier transfer time from barrier to well. At a further increase in the number of QWs to 50 pairs, however, the optical and device performances started to degrade because of the increase in internal loss in the active region, such as the well volume itself acting as light absorbing layer and due to the aluminum oxide complexes in the barrier.

Effect of Thermal Interface Materials on Heat Dissipation of Light-Emitting Diode Headlamps with Thermally-Conductive Plastics.

We study the effect of thermal interface material such as thermal-conductive plastic on the dissipation of generated heat from the light-emitting diodes (LEDs) based headlamp for the application of environment-friendly green energy in vehicles. The thermal distribution and the performances of thermal-conductive plastic with heatsink are consistently investigated by using experimental and numerical results. Various thicknesses of thermal-conductive plastics from 0.3 mm to 1.0 mm used in this research work. Basically the thermal-conductive plastic reduces the thermal interface resistance between the contact of two solid surfaces. As a result, High electrical power of about 15 W (1 A and 15 V) can be possible for applying to the high-power LED package without any damage. The soldering temperature of LED package without thermal-conductive plastic shows approximately 138.7 °C which is higher compared to the LED package with thermal-conductive plastic (124.3 °C). On the other hand, the soldering temperature increases from 124.3 to 127.6 °C with increasing the thicknesses of thermal-conductive plastic. In addition, the soldering temperature decreases from 138.7 to 124.3 °C with increasing the thermal conductivities of thermal-conductive plastic. Finally, a highly thermal conductive property of thermal-conductive plastic will propose for optimum dissipation of generated heat from the LEDs-based headlamp. We also successfully estimate the junction temperature of packaged LEDs by using soldering temperature.

32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication.

This work proposes the use of integrated high-power InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diode (µ-LED) arrays on an AlGaN/GaN-based heterojunction field-effect transistor (HFET), also known as a high electron mobility transistor (HEMT), for various applications: underwater wireless optical communication (UWOC) and smart lighting. Therefore, we demonstrate high-power µ-LED-on-HEMT arrays that consist of 32 × 32 pixelated µ-LED arrays and 32 × 32 pixelated HEMT arrays and that are interconnected by a solder bump bonding technique. Each pixel of the µ-LED arrays emits light in the HEMT on-state. The threshold voltage, the off-state leakage current, and the drain current of the HEMT arrays are -4.6 V, <~1.1 × 10-9 A at gate-to-source voltage (VGS) = -10 V, and 21 mA at VGS = 4 V, respectively. At 12 mA, the forward voltage and the light output power (LOP) of µ-LED arrays are ~4.05 V and ~3.5 mW, respectively. The LOP of the integrated µ-LED-on-HEMT arrays increases from 0 to ~4 mW as the VGS increases from -6 to 4 V at VDD = 10 V. Each pixel of the integrated µ-LEDs exhibits a modulated high LOP at a peak wavelength of ~450 nm, showing their potential as candidates for use in UWOC.

Interfacial reactions of nano-structured Cu-doped indium oxide/indium tin oxide ohmic contacts to p-GaN.

Interfacial microstructure and elemental diffusion of Cu-doped indium oxide (CIO)/indium tin oxide (ITO) ohmic contacts to p-type GaN for light-emitting diodes (LEDs) were investigated using cross-sectional transmission electron microscopy (XTEM), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction. The CIO/ITO contacts gave specific contact resistances of approximately 10(-4) omegacm2 and transmittance greater than 95% at a wavelength of 405 nm when annealed at 630 degrees C for 1 min in air. After annealing at 630 degrees C, multi-component oxides composed of Ga2O3-In2O3, Ga2O3-CuO, and In2O3-CuO formed at the interface between p-GaN and ITO. Formation of multi-component oxides reduced the barrier height between p-GaN and ITO due to their higher work functions than that of ITO, and caused Ga in the GaN to diffuse into the CIO/ITO layer, followed by generation of acceptor-like Ga vacancies near the GaN surface, which lowered contact resistivity of the CIO/ITO contacts to p-GaN after the annealing.

Graphite as a Long-Life Ca2+-Intercalation Anode and its Implementation for Rocking-Chair Type Calcium-Ion Batteries.

Herein, graphite is proposed as a reliable Ca2+-intercalation anode in tetraglyme (G4). When charged (reduced), graphite accommodates solvated Ca2+-ions (Ca-G4) and delivers a reversible capacity of 62 mAh g-1 that signifies the formation of a ternary intercalation compound, Ca-G4·C72. Mass/volume changes during Ca-G4 intercalation and the evolution of in operando X-ray diffraction studies both suggest that Ca-G4 intercalation results in the formation of an intermediate phase between stage-III and stage-II with a gallery height of 11.41 Å. Density functional theory calculations also reveal that the most stable conformation of Ca-G4 has a planar structure with Ca2+ surrounded by G4, which eventually forms a double stack that aligns with graphene layers after intercalation. Despite large dimensional changes during charge/discharge (C/D), both rate performance and cyclic stability are excellent. Graphite retains a substantial capacity at high C/D rates (e.g., 47 mAh g-1 at 1.0 A g-1 s vs 62 mAh g-1 at 0.05 A g-1) and shows no capacity decay during as many as 2000 C/D cycles. As the first Ca2+-shuttling calcium-ion batteries with a graphite anode, a full-cell is constructed by coupling with an organic cathode and its electrochemical performance is presented.

Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on p-GaN for InGaN/GaN Light-Emitting Diodes.

The origin of plasma-induced damage on a p -type wide-bandgap layer during the sputtering of tin-doped indium oxide (ITO) contact layers by using radiofrequency-superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light-emitting diodes (LEDs) with sputtered ITO transparent conductive electrodes (TCE) is systematically studied. Changing the DC power voltage from negative to positive bias reduces the forward voltages and enhances the LOP of the LEDs. The positive DC power drastically decreases the electron flux in the plasma obtained by plasma diagnostics using a cutoff probe and a Langmuir probe, suggesting that the repulsion of plasma electrons from the p -GaN surface can reduce plasma-induced damage to the p -GaN. Furthermore, electron-beam irradiation on p -GaN prior to ITO deposition significantly increases the forward voltages, showing that the plasma electrons play an important role in plasma-induced damage to the p -GaN. The plasma electrons can increase the effective barrier height at the ITO/deep-level defect (DLD) band of p -GaN by compensating DLDs, resulting in the deterioration of the forward voltage and LOP. Finally, the plasma damage-free sputtered-ITO TCE enhances the LOP of the LEDs by 20% with a low forward voltage of 2.9 V at 20 mA compared to LEDs with conventional e-beam-evaporated ITO TCE.

Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes.

We have investigated high-quality ohmic contacts for flip-chip light emitting diodes using Zn-Ni nanoparticles/Ag schemes. The Zn-Ni nanoparticles/Ag contacts produce specific contact resistances of 10(-5)-10(-6) omegacm2 when annealed at temperatures of 330-530 degrees C for 1 min in air ambient, which are much better than those obtained from the Ag contacts. It is shown that blue InGaN/GaN multi-quantum well light emitting diodes fabricated with the annealed Zn-Ni nanoparticles/Ag contacts give much lower forward-bias voltages at 20 mA compared with those of the multi-quantum well light emitting diodes made with the as-deposited Ag contacts. It is further presented that the multi-quantum well light emitting diodes made with the Zn-Ni nanoparticles/Ag contacts show similar output power compared to those fabricated with the Ag contact layers.