Growth of Large-Area 2D MoS2 Arrays at Pre-Defined Locations Using Stencil Mask Lithography.

The growth of MoS2 layers of desired dimensions at predefined locations is essential for fabricating opto-electronic devices based solely on MoS2 or on hetero-structures based on MoS2. Here we present a new route for patterned growth of MoS2 by combining radio frequency (RF) magnetron sputtering, stencil mask lithography and vapour phase sulfurization. The present method does not involve chemical etchants and organic photoresist and hence provides a simplified process of achieving MoS2 patterns. Here, the control over the number of layers (mono, few and bulk) of MoS2 is achieved by varying the thickness of Mo films. The statistical variation in thickness i.e., number of MoS2 layers within the individual patterns is investigated from Raman mappings which revealed the uniform growth of 3-4 MoS2 layers. From Kelvin probe force microscopy, the surface potential values of MoS2 patterns lie in the range -350 to -370 mV, which is consistent with 2D MoS2 layer with thickness of 3-4 layers. The surface potential analysis across individual patterns indicates weakly n-type doping of few layers MoS2 with Fermi level located ~0.83-0.85 eV below the conduction band edge.

Optical properties and band alignments in ZnTe nanoparticles/MoS2 layer hetero-interface using SE and KPFM studies.

Integration of a layered two-dimensional (2D) material with a non-2D material provides a platform where one can modulate and achieve the properties desired for various next-generation electronic and opto-electronic applications. Here, we investigated ZnTe nanoparticles/MoS2 hetero-interfaces with the thickness of the MoS2 varying from few to multilayer. High-resolution transmission electron microscopy was used to observe the crystalline behaviour of the ZnTe nanoparticles, while the number of MoS2 layers was investigated using Raman measurements. Spectroscopic ellipsometry (SE) analysis based on the five-layer fitting model was used to analyse the optical behaviour of the heterojunction, where the excitonic features corresponding to the MoS2 layers and absorption features due to the ZnTe nanoparticles are observed. From the Kelvin probe force microscopy (KPFM) measurements, the surface potential (SP) of the ZnTe nanoparticles/MoS2 is found to be different in comparison with the SP of the ZnTe nanoparticles and MoS2, which is indicative of the charge transfer at the ZnTe nanoparticles/MoS2 hetero-interface. Various parameters obtained using SE and KPFM measurements were used to propose energy band alignments at the ZnTe nanoparticles/MoS2 hetero-interface. In addition, an interface photovoltage of 193 mV was obtained by carrying out KPFM measurements under illuminating condition.

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes.

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained.