Catalytic Asymmetric Deoxygenative Cyclopropanation Reactions by a Chiral Salen-Mo Catalyst.

The catalytic asymmetric cyclopropanation reaction of alkenes with diazo compounds is a direct and powerful method to construct chiral cyclopropanes that are essential to drug discovery. However, diazo compounds are potentially explosive and often require hazardous reagents for their preparation. Here, we report on the use of 1,2-dicarbonyl compounds as safe and readily available surrogates for diazo compounds in the direct catalytic asymmetric deoxygenative cyclopropanation reaction. Enabled by a class of simple and readily accessible chiral salen-Mo catalysts, the reaction proceeded with generally good enantioselectivities and yields toward a wide range of substrates (80 examples). Preliminary mechanistic studies suggested that the proposed µ-oxo bridged dinuclear Mo(III)-species was the catalytically active species. This strategy not only provides a promising route for the synthesis of chiral cyclopropanes but also opens a new window for the potential applications of chiral salen-Mo complexes in asymmetric catalysis.

Raman spectroscopy of graphene-based materials and its applications in related devices.

Graphene-based materials exhibit remarkable electronic, optical, and mechanical properties, which has resulted in both high scientific interest and huge potential for a variety of applications. Furthermore, the family of graphene-based materials is growing because of developments in preparation methods. Raman spectroscopy is a versatile tool to identify and characterize the chemical and physical properties of these materials, both at the laboratory and mass-production scale. This technique is so important that most of the papers published concerning these materials contain at least one Raman spectrum. Thus, here, we systematically review the developments in Raman spectroscopy of graphene-based materials from both fundamental research and practical (i.e., device applications) perspectives. We describe the essential Raman scattering processes of the entire first- and second-order modes in intrinsic graphene. Furthermore, the shear, layer-breathing, G and 2D modes of multilayer graphene with different stacking orders are discussed. Techniques to determine the number of graphene layers, to probe resonance Raman spectra of monolayer and multilayer graphenes and to obtain Raman images of graphene-based materials are also presented. The extensive capabilities of Raman spectroscopy for the investigation of the fundamental properties of graphene under external perturbations are described, which have also been extended to other graphene-based materials, such as graphene quantum dots, carbon dots, graphene oxide, nanoribbons, chemical vapor deposition-grown and SiC epitaxially grown graphene flakes, composites, and graphene-based van der Waals heterostructures. These fundamental properties have been used to probe the states, effects, and mechanisms of graphene materials present in the related heterostructures and devices. We hope that this review will be beneficial in all the aspects of graphene investigations, from basic research to material synthesis and device applications.

The Pentagonal Nature of Self-Assembled Silicon Chains and Magic Clusters on Ag(110).

The atomic structures of self-assembled silicon nanoribbons and magic clusters on Ag(110) substrate have been studied by high-resolution noncontact atomic force microscopy (nc-AFM) and tip-enhanced Raman spectroscopy (TERS). Pentagon-ring structures in Si nanoribbons and clusters have been directly visualized. Moreover, the vibrational fingerprints of individual Si nanoribbon and cluster retrieved by subnanometer resolution TERS confirm the pentagonal nature of both Si nanoribbons and clusters. This work demonstrates that Si pentagon can be an important element in building silicon nanostructures, which may find important applications for future nanoelectronic devices based on silicon.

Vibrational Properties of a Monolayer Silicene Sheet Studied by Tip-Enhanced Raman Spectroscopy.

Combining ultrahigh sensitivity, spatial resolution, and the capability to resolve chemical information, tip-enhanced Raman spectroscopy (TERS) is a powerful tool to study molecules or nanoscale objects. Here we show that TERS can also be a powerful tool in studying two-dimensional materials. We have achieved a 10^{9} Raman signal enhancement and a 0.5 nm spatial resolution using monolayer silicene on Ag(111) as a prototypical 2D material system. Because of the selective enhancement on Raman modes with vertical vibrational components in TERS, our experiment provides direct evidence of the origination of Raman modes in silicene. Furthermore, the ultrahigh sensitivity of TERS allows us to identify different vibrational properties of silicene phases, which differ only in the bucking direction of the Si-Si bonds. Local vibrational features from defects and domain boundaries in silicene can also be identified.

Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material.

Two-dimensional (2D) transition metal dichalcogenide (TMD) nanosheets exhibit remarkable electronic and optical properties. The 2D features, sizable bandgaps and recent advances in the synthesis, characterization and device fabrication of the representative MoS2, WS2, WSe2 and MoSe2 TMDs make TMDs very attractive in nanoelectronics and optoelectronics. Similar to graphite and graphene, the atoms within each layer in 2D TMDs are joined together by covalent bonds, while van der Waals interactions keep the layers together. This makes the physical and chemical properties of 2D TMDs layer-dependent. In this review, we discuss the basic lattice vibrations of 2D TMDs from monolayer, multilayer to bulk material, including high-frequency optical phonons, interlayer shear and layer breathing phonons, the Raman selection rule, layer-number evolution of phonons, multiple phonon replica and phonons at the edge of the Brillouin zone. The extensive capabilities of Raman spectroscopy in investigating the properties of TMDs are discussed, such as interlayer coupling, spin-orbit splitting and external perturbations. The interlayer vibrational modes are used in rapid and substrate-free characterization of the layer number of multilayer TMDs and in probing interface coupling in TMD heterostructures. The success of Raman spectroscopy in investigating TMD nanosheets paves the way for experiments on other 2D crystals and related van der Waals heterostructures.

Intralayer Phonons in Multilayer Graphene Moiré Superlattices.

Moiré pattern in twisted multilayers (tMLs) induces many emergent phenomena by subtle variation of atomic registry to modulate quasiparticles and their interactions, such as superconductivity, moiré excitons, and moiré phonons. The periodic superlattice potential introduced by moiré pattern also underlies patterned interlayer coupling at the interface of tMLs. Although this arising patterned interfacial coupling is much weaker than in-plane atomic interactions, it is crucial in moiré systems, as captured by the renormalized interlayer phonons in twisted bilayer transitional metal dichalcogenides. Here, we determine the quantitative relationship between the lattice dynamics of intralayer out-of-plane optical (ZO) phonons and patterned interfacial coupling in multilayer graphene moiré superlattices (MLG-MS) by the proposed perturbation model, which is previously challenging for MLGs due to their out-of-phase displacements of adjacent atoms in one atomic plane. We unveil that patterned interfacial coupling introduces profound modulations on Davydov components of nonfolded ZO phonon that are localized within the AB-stacked constituents, while the coupling results in layer-extended vibrations with symmetry of moiré pattern for moiré ZO phonons. Our work brings further degrees of freedom to engineer moiré physics according to the modulations imprinted on the phonon frequency and wavefunction.

Intrinsic effect of interfacial coupling on the high-frequency intralayer modes in twisted multilayer MoTe2.

The interfacial coupling at the interface makes the van der Waals heterostructures (vdWHs) exhibit many unique properties that cannot be realized in its constituents. Such a study usually starts with a twisted stack of two flakes exfoliated from the same layered materials to form twisted multilayers, in which the impact of interfacial coupling on the low-frequency interlayer modes had been well understood. However, it is not clear how interfacial coupling affects the high-frequency intralayer modes of twisted multilayers. Herein, we perform high-resolution resonance Raman spectroscopy of the high-frequency intralayer modes in twisted multilayer MoTe2 (tMLM). All the Davydov entities of the out-of-plane intralayer mode are observed and distinguished at 4 K. It is found that the out-of-plane intralayer modes in tMLM are sensitive to its interfacial layer-breathing coupling so that the out-of-plane intralayer modes in tMLM do not show a direct relationship with those of the two constituents. However, the case is quite different for the in-plane intralayer modes in tMLM, whose spectral profile can be fitted by those of the corresponding modes of its constituents. This indicates that the in-plane intralayer modes are localized within the constituents in tMLM because of its negligible interfacial shear coupling at the interface. All the results can be well understood using the vdW model in which only the nearest neighbor interlayer/interfacial interaction is taken into account. This work directly builds the relationship between the Davydov splitting of the high-frequency intralayer vibrations and the low-frequency interlayer vibrations in tMLM, which can be further extended to other twisted materials and the related vdWHs.

Electronic Raman Scattering in Suspended Semiconducting Carbon Nanotube.

The electronic Raman scattering (ERS) features of single-walled carbon nanotubes (SWNTs) can reveal a wealth of information about their electronic structures. Previously, the ERS processes have been exclusively reported in metallic SWNTs (M-SWNTs) and attributed to the inelastic scattering of photoexcited excitons by a continuum of low-energy electron-hole pairs near the Fermi level. Therefore, the ERS features have been thought to appear exclusively in M-SWNTs but not in semiconducting SWNTs (S-SWNTs), which are more desired in many application fields such as nanoelectronics and bioimaging. In this work, the experimental observation of the ERS features in suspended S-SWNTs is reported, the processes of which are accomplished via the available high-energy electron-hole pairs. The excitonic transition energies with an uncertainty in the order of ±1 meV can be directly obtained via the ERS spectra, compared to a typical uncertainty of ±10 meV in conventional electronic spectroscopies. The ERS features can facilitate further systematic studies on the properties of SWNT, both metallic and semiconducting, with defined chirality.

Raman Spectroscopy of Two-Dimensional Borophene Sheets.

The successful fabrication of a two-dimensional boron sheet, which features a triangular lattice with periodic hole arrays, has stimulated great interest in its specific structure as well as properties such as possible superconductivity. Here, we report a study on the vibrational spectra and electron-phonon coupling (EPC) in monolayer boron sheets by in situ Raman and tip-enhanced Raman spectroscopy (TERS) at low temperature and ultrahigh vacuum. The gap-mode TERS gives a 3 × 109 selective enhancement on vertical vibrational Raman modes. A spatial resolution of 1 nm is achieved in this system. Combined with first-principle calculations, the vibrational properties as well as EPC in borophene are determined. The results are helpful for further study on the mechanical, electronic, and possible superconducting properties of two-dimensional boron.

Cross-dimensional electron-phonon coupling in van der Waals heterostructures.

The electron-phonon coupling (EPC) in a material is at the frontier of the fundamental research, underlying many quantum behaviors. van der Waals heterostructures (vdWHs) provide an ideal platform to reveal the intrinsic interaction between their electrons and phonons. In particular, the flexible van der Waals stacking of different atomic crystals leads to multiple opportunities to engineer the interlayer phonon modes for EPC. Here, in hBN/WS2 vdWH, we report the strong cross-dimensional coupling between the layer-breathing phonons well extended over tens to hundreds of layer thick vdWH and the electrons localized within the few-layer WS2 constituent. The strength of such cross-dimensional EPC can be well reproduced by a microscopic picture through the mediation by the interfacial coupling and also the interlayer bond polarizability model in vdWHs. The study on cross-dimensional EPC paves the way to manipulate the interaction between electrons and phonons in various vdWHs by interfacial engineering for possible interesting physical phenomena.

Probing the edge-related properties of atomically thin MoS2 at nanoscale.

Defects can induce drastic changes of the electronic properties of two-dimensional transition metal dichalcogenides and influence their applications. It is still a great challenge to characterize small defects and correlate their structures with properties. Here, we show that tip-enhanced Raman spectroscopy (TERS) can obtain distinctly different Raman features of edge defects in atomically thin MoS2, which allows us to probe their unique electronic properties and identify defect types (e.g., armchair and zigzag edges) in ambient. We observed an edge-induced Raman peak (396 cm-1) activated by the double resonance Raman scattering (DRRS) process and revealed electron-phonon interaction in edges. We further visualize the edge-induced band bending region by using this DRRS peak and electronic transition region using the electron density-sensitive Raman peak at 406 cm-1. The power of TERS demonstrated in MoS2 can also be extended to other 2D materials, which may guide the defect engineering for desired properties.

Stokes and anti-Stokes Raman scattering in mono- and bilayer graphene.

Stokes and anti-Stokes Raman spectroscopy associated with the intervalley double resonance process in carbon materials is a unique technique to reveal the relationship between their characteristic electronic band structures and phonon dispersion. In graphene, the dominant resonant behavior for its 2D mode is an intervalley triple resonance Raman process. In this paper, we report the Stokes and anti-Stokes Raman scattering of the 2D mode in pristine graphene. The excitation energy (Eex)-dependent frequency discrepancy between anti-Stokes and Stokes components of the 2D mode (Δω(2D)) is observed, which is in good agreement with the theoretical results. This is attributed to the nonlinear dispersion of the in-plane transverse optical (iTO) phonon branch near the K point, confirmed by the nonlinear Eex-dependent frequency of the 2D mode (ω(2D)) in the range of 1.58-3.81 eV. The wavevector-dependent phonon group velocity of the iTO phonon branch is directly derived from Δω(2D). The Stokes and anti-Stokes Raman scattering of the D mode in defected graphene and the 2D mode in bilayer graphene associated with intervalley double resonance Raman processes is also reported.

Moiré Phonons in Twisted Bilayer MoS2.

The material choice, layer thickness, and twist angle widely enrich the family of van der Waals heterostructures (vdWHs), providing multiple degrees of freedom to engineer their optical and electronic properties. The moiré patterns in vdWHs create a periodic potential for electrons and excitons to yield many interesting phenomena, such as Hofstadter butterfly spectrum and moiré excitons. Here, in the as-grown/transferred twisted bilayer MoS2 (tBLMs), one of the simplest prototypes of vdWHs, we show that the periodic potentials of moiré patterns also modify the properties of phonons of its monolayer MoS2 constituent to generate Raman modes related to moiré phonons. These Raman modes correspond to zone-center phonons in tBLMs, which are folded from the off-center phonons in monolayer MoS2. However, the folded phonons related to crystallographic superlattices are not observed in the Raman spectra. By varying the twist angle, the moiré phonons of tBLM can be exploited to map the phonon dispersions of the monolayer constituent. The lattice dynamics of the moiré phonons are modulated by the patterned interlayer coupling resulting from periodic potential of moiré patterns, as confirmed by density functional theory calculations. The Raman intensity related to moiré phonons in all tBLMs are strongly enhanced when the excitation energy approaches the C exciton energy. This study can be extended to various vdWHs to deeply understand their Raman spectra, moiré phonons, lattice dynamics, excitonic effects, and interlayer coupling.

Interfacial Interactions in van der Waals Heterostructures of MoS2 and Graphene.

Interfacial coupling between neighboring layers of van der Waals heterostructures (vdWHs), formed by vertically stacking more than two types of two-dimensional materials (2DMs), greatly affects their physical properties and device performance. Although high-resolution cross-sectional scanning tunneling electron microscopy can directly image the atomically sharp interfaces in the vdWHs, the interfacial coupling and lattice dynamics of vdWHs formed by two different types of 2DMs, such as semimetal and semiconductor, are not clear so far. Here, we report the ultralow-frequency Raman spectroscopy investigation on interfacial couplings in the vdWHs formed by graphene and MoS2 flakes. Because of the significant interfacial layer-breathing couplings between MoS2 and graphene flakes, a series of layer-breathing modes with frequencies dependent on their layer numbers are observed in the vdWHs, which can be described by the linear chain model. It is found that the interfacial layer-breathing force constant between MoS2 and graphene, α0⊥(I) = 60 × 1018 N/m3, is comparable with the layer-breathing force constant of multilayer MoS2 and graphene. The results suggest that the interfacial layer-breathing couplings in the vdWHs formed by MoS2 and graphene flakes are not sensitive to their stacking order and twist angle between the two constituents. Our results demonstrate that the interfacial interlayer coupling in vdWHs formed by two-dimensional semimetals and semiconductors can lead to new lattice vibration modes, which not only can be used to measure the interfacial interactions in vdWHs but also is beneficial to fundamentally understand the properties of vdWHs for further engineering the vdWHs-based electronic and photonic devices.

Filter-based ultralow-frequency Raman measurement down to 2 cm-1 for fast Brillouin spectroscopy measurement.

Simultaneous Stokes and anti-Stokes ultralow-frequency (ULF) Raman measurement down to ∼2 cm-1 or 60 GHz is realized by a single-stage spectrometer in combination with volume-Bragg-grating-based notch filters. This system reveals its excellent performance by probing Brillouin signal of acoustic phonons in silicon, germanium, gallium arsenide, and gallium nitride. The deduced sound velocity and elastic constants are in good accordance with previous results determined by various methods. This system can shorten the integration time of the Brillouin signal with a good signal-to-noise ratio by more than 2000-fold compared to a Fabry-Perot interferometer (FPI). This study shows how a filter-based ULF Raman system can be used to reliably achieve Brillouin spectroscopy for condensed materials with high sensitivity and high signal-to-noise ratio, stimulating fast Brillouin spectrum measurements to probe acoustic phonons in semiconductors.

Black phosphorus ink formulation for inkjet printing of optoelectronics and photonics.

Black phosphorus is a two-dimensional material of great interest, in part because of its high carrier mobility and thickness dependent direct bandgap. However, its instability under ambient conditions limits material deposition options for device fabrication. Here we show a black phosphorus ink that can be reliably inkjet printed, enabling scalable development of optoelectronic and photonic devices. Our binder-free ink suppresses coffee ring formation through induced recirculating Marangoni flow, and supports excellent consistency (< 2% variation) and spatial uniformity (< 3.4% variation), without substrate pre-treatment. Due to rapid ink drying (< 10 s at < 60 °C), printing causes minimal oxidation. Following encapsulation, the printed black phosphorus is stable against long-term (> 30 days) oxidation. We demonstrate printed black phosphorus as a passive switch for ultrafast lasers, stable against intense irradiation, and as a visible to near-infrared photodetector with high responsivities. Our work highlights the promise of this material as a functional ink platform for printed devices.Atomically thin black phosphorus shows promise for optoelectronics and photonics, yet its instability under environmental conditions and the lack of well-established large-area synthesis protocols hinder its applications. Here, the authors demonstrate a stable black phosphorus ink suitable for printed ultrafast lasers and photodetectors.

Review on the Raman spectroscopy of different types of layered materials.

Two-dimensional layered materials, such as graphene and transition metal dichalcogenides (TMDs), have been under intensive investigation. The rapid progress of research on graphene and TMDs is now stimulating the exploration of different types of layered materials (LMs). Raman spectroscopy has shown its great potential in the characterization of layer numbers, interlayer coupling and layer-stacking configurations and will benefit the future explorations of other LMs. Lattice vibrations or Raman spectra of many LMs in bulk have been discussed since the 1960s. However, different results were obtained because of differences or limitations in the Raman instruments at early stages. The developments of modern Raman spectroscopy now allow us to revisit the Raman spectra of these LMs under the same experimental conditions. Moreover, to the best of our knowledge, there were limitations in detailed reviews on the Raman spectra of these different LMs. Here, we provide a review on Raman spectra of various LMs, including semiconductors, topological insulators, insulators, semi-metals and superconductors. We firstly introduce a unified method based on symmetry analysis and polarization measurements to assign the observed Raman modes and characterize the crystal structure of different types of LMs. Then, we revisit and update the positions and assignments of vibration modes by re-measuring the Raman spectra of different types of LMs and by comparing our results to those reported in previous papers. We apply the recent advances on the interlayer vibrations of graphene and TMDs to these various LMs and obtain their shear modulus. The observation of the shear modes of LMs in bulk facilitates an accurate and fast characterization of layer numbers during preparation processes in the future by a robust layer-number dependency on the frequencies of the shear modes. We also summarize the recent advances on the layer-stacking dependence on the intensities of interlayer shear vibrations. Finally, we review the recent advances on Raman spectroscopy in the characterization of anisotropic LMs, such as black phosphorus and rhenium diselenide. We believe that this review will benefit the future research studies on the fundamental physics and potential applications of these various LMs, particularly when they are reduced down to monolayers or multilayers.

Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2.

Anisotropic two-dimensional (2D) van der Waals (vdW) layered materials, with both scientific interest and application potential, offer one more dimension than isotropic 2D materials to tune their physical properties. Various physical properties of 2D multi-layer materials are modulated by varying their stacking orders owing to significant interlayer vdW coupling. Multilayer rhenium disulfide (ReS2), a representative anisotropic 2D material, was expected to be randomly stacked and lack interlayer coupling. Here, we demonstrate two stable stacking orders, namely isotropic-like (IS) and anisotropic-like (AI) N layer (NL, N > 1) ReS2 are revealed by ultralow- and high-frequency Raman spectroscopy, photoluminescence and first-principles density functional theory calculation. Two interlayer shear modes are observed in AI-NL-ReS2 while only one shear mode appears in IS-NL-ReS2, suggesting anisotropic- and isotropic-like stacking orders in IS- and AI-NL-ReS2, respectively. This explicit difference in the observed frequencies identifies an unexpected strong interlayer coupling in IS- and AI-NL-ReS2. Quantitatively, the force constants of them are found to be around 55-90% of those of multilayer MoS2. The revealed strong interlayer coupling and polytypism in multi-layer ReS2 may stimulate future studies on engineering physical properties of other anisotropic 2D materials by stacking orders.

Interface Coupling in Twisted Multilayer Graphene by Resonant Raman Spectroscopy of Layer Breathing Modes.

Raman spectroscopy is the prime nondestructive characterization tool for graphene and related layered materials. The shear (C) and layer breathing modes (LBMs) are due to relative motions of the planes, either perpendicular or parallel to their normal. This allows one to directly probe the interlayer interactions in multilayer samples. Graphene and other two-dimensional (2d) crystals can be combined to form various hybrids and heterostructures, creating materials on demand with properties determined by the interlayer interaction. This is the case even for a single material, where multilayer stacks with different relative orientations have different optical and electronic properties. In twisted multilayer graphene there is a significant enhancement of the C modes due to resonance with new optically allowed electronic transitions, determined by the relative orientation of the layers. Here we show that this applies also to the LBMs, which can be now directly measured at room temperature. We find that twisting has a small effect on LBMs, quite different from the case of the C modes. This implies that the periodicity mismatch between two twisted layers mostly affects shear interactions. Our work shows that ultralow-frequency Raman spectroscopy is an ideal tool to uncover the interface coupling of 2d hybrids and heterostructures.

Resonant Raman spectroscopy of twisted multilayer graphene.

Graphene and other two-dimensional crystals can be combined to form various hybrids and heterostructures, creating materials on demand with properties determined by the interlayer interaction. This is the case even for a single material, where multilayer stacks with different relative orientation have different optical and electronic properties. Probing and understanding the interface coupling is thus of primary importance for fundamental science and applications. Here we study twisted multilayer graphene flakes with multi-wavelength Raman spectroscopy. We find a significant intensity enhancement of the interlayer coupling modes (C peaks) due to resonance with new optically allowed electronic transitions, determined by the relative orientation of the layers. The interlayer coupling results in a Davydov splitting of the C peak in systems consisting of two equivalent graphene multilayers. This allows us to directly quantify the interlayer interaction, which is much smaller compared with Bernal-stacked interfaces. This paves the way to the use of Raman spectroscopy to uncover the interface coupling of two-dimensional hybrids and heterostructures.