X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor.
Nano Lett
; 11(7): 2875-80, 2011 Jul 13.
Article
in En
| MEDLINE
| ID: mdl-21627099
ABSTRACT
For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.
Full text:
1
Database:
MEDLINE
Main subject:
Silicon
/
Transistors, Electronic
/
Nanotechnology
/
Quantum Dots
/
Germanium
Language:
En
Year:
2011
Type:
Article