Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask.
Nanotechnology
; 22(29): 295201, 2011 Jul 22.
Article
in En
| MEDLINE
| ID: mdl-21673381
ABSTRACT
A graphene nanoribbon (GNR) is an important basic structure to open a bandgap in graphene. The GNR processes reported in the literature are complex, time-consuming, and expensive; moreover, the device yield is relatively low. In this paper, a simple new process to fabricate a long and straight graphene nanoribbon with a high yield has been proposed. This process utilizes CVD graphene substrate and a ZnO nanowire as the hardmask for patterning. 8 µm long and 50-100 nm wide GNRs were successfully demonstrated in high density without any trimming, and â¼ 10% device yield was realized with a top-down patterning process. After passivating the surfaces of the GNRs using a low temperature atomic layer deposition (ALD) of Al(2)O(3), high performance GNR MOSFETs with symmetric drain-current-gate-voltage (I(d)-V(g)) curves were demonstrated and a field effect mobility up to â¼ 1200 cm(2) V(-1) s(-1) was achieved at V(d) = 10 mV.
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Database:
MEDLINE
Language:
En
Year:
2011
Type:
Article