Your browser doesn't support javascript.
loading
Performance of a silicon monochromator under high heat load.
Chumakov, Aleksandr I; Sergeev, Ilya; Celse, Jean-Philippe; Rüffer, Rudolf; Lesourd, Marc; Zhang, Lin; Sánchez del Río, Manuel.
Affiliation
  • Chumakov AI; European Synchrotron Radiation Facility, F-38043 Grenoble, France.
  • Sergeev I; Deutsches Elektronen-Synchrotron, D-22607 Hamburg, Germany.
  • Celse JP; European Synchrotron Radiation Facility, F-38043 Grenoble, France.
  • Rüffer R; European Synchrotron Radiation Facility, F-38043 Grenoble, France.
  • Lesourd M; European Synchrotron Radiation Facility, F-38043 Grenoble, France.
  • Zhang L; European Synchrotron Radiation Facility, F-38043 Grenoble, France.
  • Sánchez del Río M; European Synchrotron Radiation Facility, F-38043 Grenoble, France.
J Synchrotron Radiat ; 21(Pt 2): 315-24, 2014 Mar.
Article in En | MEDLINE | ID: mdl-24562552
ABSTRACT
The performance of a cryogenically cooled double-crystal silicon monochromator was studied under high-heat-load conditions with total absorbed powers and power densities ranging from 8 to 780 W and from 8 to 240 W mm(-2), respectively. When the temperature of the first crystal is maintained close to the temperature of zero thermal expansion of silicon, the monochromator shows nearly ideal performance with a thermal slope error of 0.6 µrad. By tuning the size of the first slit, the regime of the ideal performance can be maintained over a wide range of heat loads, i.e. from power densities of 110 W mm(-2) (at total absorbed power of 510 W) to 240 W mm(-2) (at total absorbed power of 240 W).
Key words

Full text: 1 Database: MEDLINE Language: En Year: 2014 Type: Article

Full text: 1 Database: MEDLINE Language: En Year: 2014 Type: Article