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Spin-pump-induced spin transport in p-type Si at room temperature.
Shikoh, Eiji; Ando, Kazuya; Kubo, Kazuki; Saitoh, Eiji; Shinjo, Teruya; Shiraishi, Masashi.
Affiliation
  • Shikoh E; Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan.
  • Ando K; Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
  • Kubo K; Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan.
  • Saitoh E; Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan and CREST, Japan Science and Technology Agency, Sanbancho, Tokyo 102-0075, Japan and The Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan.
  • Shinjo T; Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan.
  • Shiraishi M; Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan and PRESTO, Japan Science and Technology Agency, Sanbancho, Tokyo 102-0075, Japan.
Phys Rev Lett ; 110(12): 127201, 2013 Mar 22.
Article in En | MEDLINE | ID: mdl-25166836
ABSTRACT
A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni(80)Fe(20) results in spin accumulation at the Ni(80)Fe(20)/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.
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Database: MEDLINE Language: En Year: 2013 Type: Article
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Database: MEDLINE Language: En Year: 2013 Type: Article