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SEM and Raman analysis of graphene on SiC(0001).
Grodecki, K; Jozwik, I; Baranowski, J M; Teklinska, D; Strupinski, W.
Affiliation
  • Grodecki K; Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw, Poland. Electronic address: Kacper.grodecki@itme.edu.pl.
  • Jozwik I; Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw, Poland.
  • Baranowski JM; Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw, Poland; Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland.
  • Teklinska D; Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw, Poland.
  • Strupinski W; Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw, Poland.
Micron ; 80: 20-3, 2016 Jan.
Article in En | MEDLINE | ID: mdl-26409439
ABSTRACT
Graphene grown by a sublimation technique was studied by Scanning Electron Microscopy (SEM) and micro-Raman spectroscopy. The measurement area of a sample was marked and investigated using both systems, as a result of which SEM images were directly compared with Raman maps. In this work we show that a correlative analysis of Energy Selective Backscattered electrons detector (EsB), In-Lens figures and Raman maps of shape and intensity of the 2D band is adequate to determine graphene layer thickness with the precision of SEM and reliability of Raman spectroscopy.
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Full text: 1 Database: MEDLINE Main subject: Spectrum Analysis, Raman / Microscopy, Electron, Scanning / Nanostructures / Graphite Language: En Year: 2016 Type: Article

Full text: 1 Database: MEDLINE Main subject: Spectrum Analysis, Raman / Microscopy, Electron, Scanning / Nanostructures / Graphite Language: En Year: 2016 Type: Article