Characterization of a Ge<sub>1-x-y</sub>Si<sub>y</sub>Sn<sub>x</sub>/Ge<sub>1-x</sub>Sn<sub>x</sub> multiple quantum well structure grown by sputtering epitaxy. | Opt Lett;42(8): 1608-1611, 2017 Apr 15. | MEDLINE

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Characterization of a Ge_1-x-ySi_ySn_x/Ge_1-xSn_x multiple quantum well structure grown by sputtering epitaxy.

Zheng, Jun; Wang, Suyuan; Cong, Hui; Fenrich, Colleen S; Liu, Zhi; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng, Buwen; Harris, James S; Wang, Qiming.

Opt Lett ; 42(8): 1608-1611, 2017 Apr 15.

Article in En | MEDLINE | ID: mdl-28409810

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Full text: 1 Database: MEDLINE Language: En Year: 2017 Type: Article

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Full text: 1 Database: MEDLINE Language: En Year: 2017 Type: Article