Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS<sub>2</sub> and InGaN Quantum Dots.

Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS₂ and InGaN Quantum Dots.

Cheng, Guanghui; Li, Baikui; Zhao, Chunyu; Yan, Xin; Wang, Hong; Lau, Kei May; Wang, Jiannong.

Affiliation

Li B; College of Optoelectronic Engineering , Shenzhen University , Nanhai Avenue 3688 , Shenzhen , China.
Wang H; Department of Materials Science and Engineering , Southern University of Science and Technology , Shenzhen 518055 , China.

Nano Lett ; 18(9): 5640-5645, 2018 09 12.

Article in En | MEDLINE | ID: mdl-30139259

Key words

Transition-metal dichalcogenides; interfacial state; photoluminescence; quantum dots

Full text: 1 Database: MEDLINE Language: En Year: 2018 Type: Article

Full text: 1 Database: MEDLINE Language: En Year: 2018 Type: Article