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Metrology for the next generation of semiconductor devices.
Orji, N G; Badaroglu, M; Barnes, B M; Beitia, C; Bunday, B D; Celano, U; Kline, R J; Neisser, M; Obeng, Y; Vladar, A E.
Affiliation
  • Orji NG; National Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA.
  • Badaroglu M; Huawei Technologies, Leuven, Belgium.
  • Barnes BM; National Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA.
  • Beitia C; Univ. Grenoble Alpes, CEA, LETI, MINATEC Campus, F-38054 Grenoble Cedex9, France.
  • Bunday BD; Malta, NY, 12020, USA.
  • Celano U; IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
  • Kline RJ; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA.
  • Neisser M; National Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA.
  • Obeng Y; Kempur Microelectronics Inc., Beijing China.
  • Vladar AE; National Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA.
Article in En | MEDLINE | ID: mdl-31276101
ABSTRACT
The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering limits such as heat dissipation, carrier mobility and fault tolerance thresholds. At present, it is unclear which are the best measurement methods needed to evaluate the nanometre-scale features of such devices and how the fundamental limits will affect the required metrology. Here, we review state-of-the-art dimensional metrology methods for integrated circuits, considering the advantages, limitations and potential improvements of the various approaches. We describe how integrated circuit device design and industry requirements will affect lithography options and consequently metrology requirements. We also discuss potentially powerful emerging technologies and highlight measurement problems that at present have no obvious solution.
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