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Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane ß-Ga2O3 pn Oxide Heterojunction.
Bae, Hagyoul; Charnas, Adam; Sun, Xing; Noh, Jinhyun; Si, Mengwei; Chung, Wonil; Qiu, Gang; Lyu, Xiao; Alghamdi, Sami; Wang, Haiyan; Zemlyanov, Dmitry; Ye, Peide D.
Affiliation
  • Bae H; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
  • Charnas A; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
  • Sun X; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
  • Noh J; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
  • Si M; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
  • Chung W; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
  • Qiu G; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
  • Lyu X; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
  • Alghamdi S; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
  • Wang H; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
  • Zemlyanov D; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
  • Ye PD; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
ACS Omega ; 4(24): 20756-20761, 2019 Dec 10.
Article in En | MEDLINE | ID: mdl-31858062
ABSTRACT
Herein, we present a solar-blind ultraviolet photodetector realized using atomic layer-deposited p-type cuprous oxide (Cu2O) underneath a mechanically exfoliated n-type ß-gallium oxide (ß-Ga2O3) nanomembrane. The atomic layer deposition process of the Cu2O film applies bis(N,N'-di-secbutylacetamidinato)dicopper(I) [Cu(5Bu-Me-amd)]2 as a novel Cu precursor and water vapor as an oxidant. The exfoliated ß-Ga2O3 nanomembrane was transferred to the top of the Cu2O layer surface to realize a unique oxide pn heterojunction, which is not easy to realize by conventional oxide epitaxy techniques. The current-voltage (I-V) characteristics of the fabricated pn heterojunction diode show the typical rectifying behavior. The fabricated Cu2O/ß-Ga2O3 photodetector achieves sensitive detection of current at the picoampere scale in the reverse mode. This work provides a new approach to integrate all oxide heterojunctions using membrane transfer and bonding techniques, which goes beyond the limitation of conventional heteroepitaxy.
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Full text: 1 Database: MEDLINE Language: En Year: 2019 Type: Article
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Full text: 1 Database: MEDLINE Language: En Year: 2019 Type: Article