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A Flexible Carbon Nanotube Sen-Memory Device.
Qu, Ting-Yu; Sun, Yun; Chen, Mao-Lin; Liu, Zhi-Bo; Zhu, Qian-Bing; Wang, Bing-Wei; Zhao, Tian-Yang; Liu, Chi; Tan, Jun; Qiu, Song; Li, Qing-Wen; Han, Zheng; Wang, Wei; Cheng, Hui-Ming; Sun, Dong-Ming.
Affiliation
  • Qu TY; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
  • Sun Y; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
  • Chen ML; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
  • Liu ZB; School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China.
  • Zhu QB; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
  • Wang BW; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
  • Zhao TY; School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China.
  • Liu C; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
  • Tan J; School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China.
  • Qiu S; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
  • Li QW; School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China.
  • Han Z; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
  • Wang W; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
  • Cheng HM; Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123, China.
  • Sun DM; Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123, China.
Adv Mater ; 32(9): e1907288, 2020 Mar.
Article in En | MEDLINE | ID: mdl-31977113
ABSTRACT
In a modern electronics system, charge-coupled devices and data storage devices are the two most indispensable components. Although there has been rapid and independent progress in their development during the last three decades, a cofunctionality of both sensing and memory at single-unit level is yet premature for flexible electronics. For wearable electronics that work in ultralow power conditions and involve strains, conventional sensing-and-memory systems suffer from low sensitivity and are not able to directly transform sensed information into sufficient memory. Here, a new transformative device is demonstrated, which is called "sen-memory", that exhibits the dual functionality of sensing and memory in a monolithic integrated circuit. The active channel of the device is formed by a carbon nanotube thin film and the floating gate is formed by a controllably oxidized aluminum nanoparticle array for electrical- and optical-programming. The device exhibits a high on-off current ratio of ≈106 , a long-term retention of ≈108 s, and durable flexibility at a bending strain of 0.4%. It is shown that the device senses a photogenerated pattern in seconds at zero bias and memorizes an image for a couple of years.
Key words

Full text: 1 Database: MEDLINE Language: En Year: 2020 Type: Article

Full text: 1 Database: MEDLINE Language: En Year: 2020 Type: Article