Your browser doesn't support javascript.
loading
Facile and Reversible Carrier-Type Manipulation of Layered MoTe2 Toward Long-Term Stable Electronics.
Li, Mengjiao; Lin, Che-Yi; Chang, Yuan-Ming; Yang, Shih-Hsien; Lee, Mu-Pai; Chen, Ciao-Fen; Lee, Ko-Chun; Yang, Feng-Shou; Chou, Yi; Lin, Yi-Chun; Ueno, Keiji; Shi, Yumeng; Chou, Yi-Chia; Tsukagoshi, Kazuhito; Lin, Yen-Fu.
Affiliation
  • Li M; Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan.
  • Lin CY; Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan.
  • Chang YM; Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan.
  • Yang SH; International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of the Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.
  • Lee MP; Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan.
  • Chen CF; Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan.
  • Lee KC; Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Yang FS; Department of Electrical Engineering and Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30010, Taiwan.
  • Chou Y; Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan.
  • Lin YC; Instrument Center, National Chung Hsing University, Taichung 40227, Taiwan.
  • Ueno K; Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan.
  • Shi Y; International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of the Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.
  • Chou YC; Engineering Technology Research Center for 2D Material Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.
  • Tsukagoshi K; Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan.
  • Lin YF; WPI Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan.
ACS Appl Mater Interfaces ; 12(38): 42918-42924, 2020 Sep 23.
Article in En | MEDLINE | ID: mdl-32864950
ABSTRACT
Flexible manipulation of the carrier transport behaviors in two-dimensional materials determines their values of practical application in logic circuits. Here, we demonstrated the carrier-type manipulation in field-effect transistors (FETs) containing α-phase molybdenum ditelluride (MoTe2) by a rapid thermal annealing (RTA) process in dry air for hole-dominated and electron-beam (EB) treatment for electron-dominated FETs. EB treatment induced a distinct shift of the transfer curve by around 135 V compared with that of the FET-processed RTA treatment, indicating that the carrier density of the EB-treated FET was enhanced by about 1 order of magnitude. X-ray photoelectron spectroscopy analysis revealed that the atomic ratio of Te decreased from 66.4 to 60.8% in the MoTe2 channel after EB treatment. The Fermi level is pinned near the new energy level resulting from the Te vacancies produced by the EB process, leading to the electron-dominant effect of the MoTe2 FET. The electron-dominated MoTe2 FET showed excellent stability for more than 700 days. Thus, we not only realized the reversible modulation of carrier-type in layered MoTe2 FETs but also demonstrated MoTe2 channels with desirable performance, including long-term stability.
Key words
Fulltext
Print
XML
PubMed Links
Search on Google

Full text: 1 Database: MEDLINE Language: En Year: 2020 Type: Article
Fulltext
Print
XML
PubMed Links
Search on Google

Full text: 1 Database: MEDLINE Language: En Year: 2020 Type: Article