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Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers.
Zhang, Xutao; Yi, Ruixuan; Gagrani, Nikita; Li, Ziyuan; Zhang, Fanlu; Gan, Xuetao; Yao, Xiaomei; Yuan, Xiaoming; Wang, Naiyin; Zhao, Jianlin; Chen, Pingping; Lu, Wei; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati.
Affiliation
  • Zhang X; Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China.
  • Yi R; Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China.
  • Gagrani N; Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.
  • Li Z; Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.
  • Zhang F; Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.
  • Gan X; Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China.
  • Yao X; State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
  • Yuan X; University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China.
  • Wang N; Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
  • Zhao J; Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.
  • Chen P; Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China.
  • Lu W; State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
  • Fu L; University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China.
  • Tan HH; State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
  • Jagadish C; University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China.
ACS Nano ; 15(5): 9126-9133, 2021 May 25.
Article in En | MEDLINE | ID: mdl-33970600

Full text: 1 Database: MEDLINE Language: En Year: 2021 Type: Article

Full text: 1 Database: MEDLINE Language: En Year: 2021 Type: Article