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Solution Epitaxy of Halide Perovskite Thin Single Crystals for Stable Transistors.
Yang, Tiebin; Jin, Chao; Qu, Jiangtao; Darvish, Amir Asadpoor; Sabatini, Randy; Zhang, Xingmo; Chen, Hansheng; Ringer, Simon P; Lakhwani, Girish; Li, Feng; Cairney, Julie; Liu, Xiaogang; Zheng, Rongkun.
Affiliation
  • Yang T; School of Physics, Australian Centre for Microscopy and Microanalysis, Sydney Nano Institute, The University of Sydney, Sydney, New South Wales 2006, Australia.
  • Jin C; Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, China.
  • Qu J; School of Aerospace, Mechanical and Mechatronic Engineering, Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, New South Wales 2006, Australia.
  • Darvish AA; ARC Centre of Excellence in Exciton Science, School of Chemistry, The University of Sydney, Sydney, New South Wales 2006, Australia.
  • Sabatini R; ARC Centre of Excellence in Exciton Science, School of Chemistry, The University of Sydney, Sydney, New South Wales 2006, Australia.
  • Zhang X; School of Physics, Australian Centre for Microscopy and Microanalysis, Sydney Nano Institute, The University of Sydney, Sydney, New South Wales 2006, Australia.
  • Chen H; School of Aerospace, Mechanical and Mechatronic Engineering, Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, New South Wales 2006, Australia.
  • Ringer SP; School of Aerospace, Mechanical and Mechatronic Engineering, Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, New South Wales 2006, Australia.
  • Lakhwani G; ARC Centre of Excellence in Exciton Science, School of Chemistry, The University of Sydney, Sydney, New South Wales 2006, Australia.
  • Li F; School of Physics, Australian Centre for Microscopy and Microanalysis, Sydney Nano Institute, The University of Sydney, Sydney, New South Wales 2006, Australia.
  • Cairney J; School of Aerospace, Mechanical and Mechatronic Engineering, Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, New South Wales 2006, Australia.
  • Liu X; Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
  • Zheng R; School of Physics, Australian Centre for Microscopy and Microanalysis, Sydney Nano Institute, The University of Sydney, Sydney, New South Wales 2006, Australia.
ACS Appl Mater Interfaces ; 13(31): 37840-37848, 2021 Aug 11.
Article in En | MEDLINE | ID: mdl-34314169
ABSTRACT
Halide perovskites hold promise for energy and optoelectronic applications due to their fascinating photophysical properties and facile processing. Among various forms, epitaxial thin single crystals (TSCs) are highly desirable due to their high crystallinity, reduced defects, and easy epitaxial integration with other materials. However, a cost-effective method for obtaining TSCs with perfect epitaxial features remains elusive. Here, we demonstrate a direct epitaxial growth of high-quality all-inorganic perovskite CsPbBr3 TSCs on various substrates through a facile solution process under near-ambient conditions. Structural characterizations reveal a high-quality epitaxy between the obtained perovskite TSCs and substrates, thus leading to efficiently reduced defects. The resultant TSCs display a low trap density (∼1011 cm-3) and a long carrier lifetime (∼10.16 ns). Top-gate/top-contact transistors based on these TSCs exhibit high on/off ratios of over 105, an optimal hole mobility of 3.9 cm2 V-1 s-1, almost hysteresis-free operation, and high stability at room temperature. Such a facile approach for the high-yield production of perovskite epitaxial TSCs will enable a broad range of high-performance electronic applications.
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Full text: 1 Database: MEDLINE Language: En Year: 2021 Type: Article
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Full text: 1 Database: MEDLINE Language: En Year: 2021 Type: Article