Nanoscale Chemical Heterogeneity Ensures Unprecedently Low Resistance Drift in Cache-Type Phase-Change Memory Materials.

Huang, Jiaen; Chen, Bin; Sha, Gang; Gong, Huang; Song, Tao; Ding, Keyuan; Rao, Feng.

Affiliation

Huang J; College of Materials Science and Engineering, Shenzhen University, Shenzhen 518071, China.
Chen B; College of Materials Science and Engineering, Shenzhen University, Shenzhen 518071, China.
Sha G; Shenzhen Key Laboratory of New Information Display and Storage Materials, Shenzhen University, Shenzhen 518071, China.
Gong H; Chinese Center of Excellence for Atom Probe Tomography, Herbert Gleiter Institute of Nanoscience, Nanjing University of Science and Technology, Nanjing 210094, China.
Song T; College of Materials Science and Engineering, Shenzhen University, Shenzhen 518071, China.
Ding K; College of Mathematics and statistics, Shenzhen University, Shenzhen 518071, China.
Rao F; College of Materials Science and Engineering, Shenzhen University, Shenzhen 518071, China.

Nano Lett ; 23(6): 2362-2369, 2023 Mar 22.

Article in En | MEDLINE | ID: mdl-36861962