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Pressure-Induced Topological Phase Transition and Large Rashba Effect in Halide Double Perovskite.
Wang, Xinyu; Tian, Hao; Li, Xu; Wang, Fengfei; Zhai, Liangjun; Zhu, Xiaoqin; Liu, Jun-Ming; Yang, Yurong.
Affiliation
  • Wang X; The School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, China.
  • Tian H; School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou 450044, China.
  • Li X; Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
  • Wang F; Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China.
  • Zhai L; The School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, China.
  • Zhu X; The School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, China.
  • Liu JM; The School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, China.
  • Yang Y; Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
J Phys Chem Lett ; 15(5): 1477-1483, 2024 Feb 08.
Article in En | MEDLINE | ID: mdl-38295292
ABSTRACT
In general, hydrostatic pressure can suppress ferroelectric polarization and further reduce Rashba spin-splitting, considering the spin-orbit coupling effect. Here, we present the design of ferroelectric double perovskite Cs2SnSiI6, which exhibits the anomalous enhancement of Rashba spin-splitting parameters by pressure-induced ferroelectric topological order. The Rashba effect is nonlinear with the decrease in polarization under pressure and reaches a maximum at the pressure-induced Weyl semimetal (WSM) state between the transition from a normal insulator (NI) to a topological insulator (TI). Furthermore, we discover that controlling ferroelectric polarization with an electric field can also induce the topological transition with a large Rashba spin-splitting but under a lower critical pressure. These discoveries show a tunable gaint Rashba effect and pressure-induced topological phase transition for Cs2SnSiI6, which can promote future research on the interaction between the Rashba effect and topological order, and its application to new electronic and spintronic devices.

Full text: 1 Database: MEDLINE Language: En Year: 2024 Type: Article

Full text: 1 Database: MEDLINE Language: En Year: 2024 Type: Article