Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication.
Adv Mater
; 36(24): e2312282, 2024 Jun.
Article
in En
| MEDLINE
| ID: mdl-38380859
ABSTRACT
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom-engineered lattices are anticipated to enable new, fundamental discoveries in condensed matter physics and lead to the creation of new semiconductor technologies including analog quantum simulators and universal solid-state quantum computers. This work reports precise and repeatable, substitutional incorporation of single arsenic atoms into a silicon lattice. A combination of scanning tunneling microscopy hydrogen resist lithography and a detailed statistical exploration of the chemistry of arsine on the hydrogen-terminated silicon (001) surface are employed to show that single arsenic dopants can be deterministically placed within four silicon lattice sites and incorporated with 97 ± 2% yield. These findings bring closer to the ultimate frontier in semiconductor technology the deterministic assembly of atomically precise dopant and qubit arrays at arbitrarily large scales.
Full text:
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Database:
MEDLINE
Language:
En
Year:
2024
Type:
Article