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Evidence for electron-hole crystals in a Mott insulator.
Qiu, Zhizhan; Han, Yixuan; Noori, Keian; Chen, Zhaolong; Kashchenko, Mikhail; Lin, Li; Olsen, Thomas; Li, Jing; Fang, Hanyan; Lyu, Pin; Telychko, Mykola; Gu, Xingyu; Adam, Shaffique; Quek, Su Ying; Rodin, Aleksandr; Castro Neto, A H; Novoselov, Kostya S; Lu, Jiong.
Affiliation
  • Qiu Z; Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore.
  • Han Y; Department of Chemistry, National University of Singapore, Singapore, Singapore.
  • Noori K; Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore.
  • Chen Z; Centre for Advanced 2D Materials (CA2DM), National University of Singapore, Singapore, Singapore.
  • Kashchenko M; Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore.
  • Lin L; School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen, China.
  • Olsen T; Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow, Russia.
  • Li J; Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia.
  • Fang H; Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore.
  • Lyu P; School of Materials Science and Engineering, Peking University, Beijing, China.
  • Telychko M; CAMD, Department of Physics, Technical university of Denmark, Lyngby, Denmark.
  • Gu X; School of Chemistry, Beihang University, Beijing, China.
  • Adam S; Department of Chemistry, National University of Singapore, Singapore, Singapore.
  • Quek SY; Department of Chemistry, National University of Singapore, Singapore, Singapore.
  • Rodin A; Department of Chemistry, National University of Singapore, Singapore, Singapore.
  • Castro Neto AH; Centre for Advanced 2D Materials (CA2DM), National University of Singapore, Singapore, Singapore.
  • Novoselov KS; Department of Physics, National University of Singapore, Singapore, Singapore.
  • Lu J; Centre for Advanced 2D Materials (CA2DM), National University of Singapore, Singapore, Singapore.
Nat Mater ; 23(8): 1055-1062, 2024 Aug.
Article in En | MEDLINE | ID: mdl-38831130
ABSTRACT
The coexistence of correlated electron and hole crystals enables the realization of quantum excitonic states, capable of hosting counterflow superfluidity and topological orders with long-range quantum entanglement. Here we report evidence for imbalanced electron-hole crystals in a doped Mott insulator, namely, α-RuCl3, through gate-tunable non-invasive van der Waals doping from graphene. Real-space imaging via scanning tunnelling microscopy reveals two distinct charge orderings at the lower and upper Hubbard band energies, whose origin is attributed to the correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru-Ru bonds, respectively. Moreover, a gate-induced transition of electron-hole crystals is directly visualized, further corroborating their nature as correlation-driven charge crystals. The realization and atom-resolved visualization of imbalanced electron-hole crystals in a doped Mott insulator opens new doors in the search for correlated bosonic states within strongly correlated materials.

Full text: 1 Database: MEDLINE Language: En Year: 2024 Type: Article

Full text: 1 Database: MEDLINE Language: En Year: 2024 Type: Article