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Ethanol surface chemistry on MBE-grown GaN(0001), GaOx/GaN(0001), and Ga2O3(2¯01).
Kollmannsberger, Sebastian L; Walenta, Constantin A; Winnerl, Andrea; Knoller, Fabian; Pereira, Rui N; Tschurl, Martin; Stutzmann, Martin; Heiz, Ueli.
Afiliación
  • Kollmannsberger SL; Chair of Physical Chemistry, Department of Chemistry and Catalysis Research Center, Technische Universität München, Lichtenbergstrasse 4, 85748 Garching, Germany.
  • Walenta CA; Chair of Physical Chemistry, Department of Chemistry and Catalysis Research Center, Technische Universität München, Lichtenbergstrasse 4, 85748 Garching, Germany.
  • Winnerl A; Walter Schottky Institute and Physics Department, Technische Universität München, Am Coulombwall 4 85748 Garching, Germany.
  • Knoller F; Chair of Physical Chemistry, Department of Chemistry and Catalysis Research Center, Technische Universität München, Lichtenbergstrasse 4, 85748 Garching, Germany.
  • Pereira RN; Walter Schottky Institute and Physics Department, Technische Universität München, Am Coulombwall 4 85748 Garching, Germany.
  • Tschurl M; Chair of Physical Chemistry, Department of Chemistry and Catalysis Research Center, Technische Universität München, Lichtenbergstrasse 4, 85748 Garching, Germany.
  • Stutzmann M; Nanosystems Initiative Munich (NIM), Schellingstr. 4, 80799 Munich, Germany.
  • Heiz U; Chair of Physical Chemistry, Department of Chemistry and Catalysis Research Center, Technische Universität München, Lichtenbergstrasse 4, 85748 Garching, Germany.
J Chem Phys ; 147(12): 124704, 2017 Sep 28.
Article en En | MEDLINE | ID: mdl-28964022
ABSTRACT
In this work, ethanol is used as a chemical probe to study the passivation of molecular beam epitaxy-grown GaN(0001) by surface oxidation. With a high degree of oxidation, no reaction from ethanol to acetaldehyde in temperature-programmed desorption experiments is observed. The acetaldehyde formation is attributed to a mechanism based on α-H abstraction from the dissociatively bound alcohol molecule. The reactivity is related to negatively charged surface states, which are removed upon oxidation of the GaN(0001) surface. This is compared with the Ga2O3(2¯01) single crystal surface, which is found to be inert for the acetaldehyde production. These results offer a toolbox to explore the surface chemistry of nitrides and oxynitrides on an atomic scale and relate their intrinsic activity to systems under ambient atmosphere.
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2017 Tipo del documento: Article
Texto completo
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2017 Tipo del documento: Article