High rectification ratio metal-insulator-semiconductor tunnel diode based on single-layer MoS<sub>2</sub>.

High rectification ratio metal-insulator-semiconductor tunnel diode based on single-layer MoS₂.

Li, Ziling; Yuan, Kai; Ye, Yu.

Afiliación

Li Z; State Key Laboratory for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, People's Republic of China.

Nanotechnology ; 31(7): 075202, 2020 Feb 07.

Article en En | MEDLINE | ID: mdl-31675749

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2020 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2020 Tipo del documento: Article