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Correction to "Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices".
ACS Omega ; 5(40): 26296, 2020 Oct 13.
Article en En | MEDLINE | ID: mdl-33073158
ABSTRACT
[This corrects the article DOI 10.1021/acsomega.0c02132.].