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Nonreciprocal Transport in a Bilayer of MnBi2Te4 and Pt.
Ye, Chen; Xie, Xiangnan; Lv, Wenxing; Huang, Ke; Yang, Allen Jian; Jiang, Sicong; Liu, Xue; Zhu, Dapeng; Qiu, Xuepeng; Tong, Mingyu; Zhou, Tong; Hsu, Chuang-Han; Chang, Guoqing; Lin, Hsin; Li, Peisen; Yang, Kesong; Wang, Zhenyu; Jiang, Tian; Renshaw Wang, Xiao.
Afiliación
  • Ye C; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link 637371, Singapore.
  • Xie X; State Key Laboratory of High Performance Computing, College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, P.R. China.
  • Lv W; Physics Laboratory, Industrial Training Center, Shenzhen Polytechnic, Shenzhen, Guangdong 518055, P.R. China.
  • Huang K; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link 637371, Singapore.
  • Yang AJ; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link 637371, Singapore.
  • Jiang S; Department of NanoEngineering and Program of Chemical Engineering, University of California San Diego, La Jolla, California 92093-0448, United States.
  • Liu X; Program of Materials Science and Engineering, University of California San Diego, La Jolla, California 92093-0418, United States.
  • Zhu D; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link 637371, Singapore.
  • Qiu X; Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
  • Tong M; Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, P.R. China.
  • Zhou T; Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, P.R. China.
  • Hsu CH; Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai 200092, P.R. China.
  • Chang G; College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, P.R. China.
  • Lin H; State Key Laboratory of High Performance Computing, College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, P.R. China.
  • Li P; Insitute of Physics, Academia Sinica, Taipei 11529, Taiwan.
  • Yang K; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link 637371, Singapore.
  • Wang Z; Insitute of Physics, Academia Sinica, Taipei 11529, Taiwan.
  • Jiang T; College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, P.R. China.
  • Renshaw Wang X; Department of NanoEngineering and Program of Chemical Engineering, University of California San Diego, La Jolla, California 92093-0448, United States.
Nano Lett ; 22(3): 1366-1373, 2022 Feb 09.
Article en En | MEDLINE | ID: mdl-35073094

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2022 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2022 Tipo del documento: Article