Laser ablation fabrication of a<i>p</i>-NiO/<i>n</i>-Si heterojunction for broadband and self-powered UV-Visible-NIR photodetection.

Laser ablation fabrication of ap-NiO/n-Si heterojunction for broadband and self-powered UV-Visible-NIR photodetection.

Chaoudhary, Savita; Dewasi, Avijit; S, Ram Prakash; Rastogi, Vipul; Pereira, Rui N; Sinopoli, Alessandro; Aïssa, Brahim; Mitra, Anirban.

Afiliación

Chaoudhary S; Department of Physics, Indian Institute of Technology Roorkee, Roorkee-247667, Uttarakhand, India.
Dewasi A; Institute for Plasma Research, Gandhinagar-382428, Bhat, Gujarat, India.
S RP; Department of Physics, Indian Institute of Technology Roorkee, Roorkee-247667, Uttarakhand, India.
Rastogi V; Department of Physics, Indian Institute of Technology Roorkee, Roorkee-247667, Uttarakhand, India.
Pereira RN; Department of Physics and i3N-Institute for Nanostructures, Nanomodelling and Nanofabrication, University of Aveiro, 3810-193 Aveiro, Portugal.
Sinopoli A; Qatar Environment & Energy Research Institute (QEERI), Hamad Bin Khalifa University (HBKU), Qatar Foundation, PO Box 34110, Doha, Qatar.
Aïssa B; Qatar Environment & Energy Research Institute (QEERI), Hamad Bin Khalifa University (HBKU), Qatar Foundation, PO Box 34110, Doha, Qatar.
Mitra A; Department of Physics, Indian Institute of Technology Roorkee, Roorkee-247667, Uttarakhand, India.

Nanotechnology ; 33(25)2022 Mar 30.

Article en En | MEDLINE | ID: mdl-35272274