Giant tunneling magnetoresistance in in-plane double-barrier magnetic tunnel junctions based on MXene Cr<sub>2</sub>C.

Giant tunneling magnetoresistance in in-plane double-barrier magnetic tunnel junctions based on MXene Cr₂C.

Yu, Hailin; Chen, Mingyan; Shao, Zhenguang; Tao, Yongmei; Jiang, Xuefan; Dong, Yaojun; Zhang, Jie; Yang, Xifeng; Liu, Yushen.

Afiliación

Yu H; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
Chen M; Hongzhiwei Technology (Shanghai) Co. Ltd., 1599 Xinjinqiao Road, Pudong, Shanghai, China.
Shao Z; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
Tao Y; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
Jiang X; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
Dong Y; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
Zhang J; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
Yang X; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
Liu Y; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.

Phys Chem Chem Phys ; 25(15): 10991-10997, 2023 Apr 12.

Article en En | MEDLINE | ID: mdl-37016939

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article