Dissociation of N2 on a Si(111)-7x7 Surface at Room Temperature.
Chemphyschem
; 24(15): e202300182, 2023 Aug 01.
Article
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| ID: mdl-37170881
ABSTRACT
We demonstrate that the strong N2 bond can be efficiently dissociated at low pressure and ambient temperature on a Si(111)-7x7 surface. The reaction was experimentally investigated by scanning tunnelling microscopy and X-ray photoemission spectroscopy. Experimental and density functional theory results suggest that relatively low thermal energy collision of N2 with the surface can facilitate electron transfer from the Si(111)-7x7 surface to the π*-antibonding orbitals of N2 that significantly weaken the N2 bond. This activated N2 triple bond dissociation on the surface leads to the formation of a Si3 N interface.
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2023
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