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Characterization of Tunneled Wide Band Gap Mixed Conductors: The Na2O-Ga2O3-TiO2 System.
García-Fernández, Javier; Hernando, María; Torres-Pardo, Almudena; López, María Luisa; Fernández-Díaz, María Teresa; Zhang, Qing; Terasaki, Osamu; Ramírez-Castellanos, Julio; González-Calbet, José M.
Afiliación
  • García-Fernández J; Inorganic Chemistry Department, Chemical Sciences Faculty, Universidad Complutense de Madrid, 28040 Madrid, Spain.
  • Hernando M; Inorganic Chemistry Department, Chemical Sciences Faculty, Universidad Complutense de Madrid, 28040 Madrid, Spain.
  • Torres-Pardo A; Inorganic Chemistry Department, Chemical Sciences Faculty, Universidad Complutense de Madrid, 28040 Madrid, Spain.
  • López ML; Inorganic Chemistry Department, Chemical Sciences Faculty, Universidad Complutense de Madrid, 28040 Madrid, Spain.
  • Fernández-Díaz MT; Institute Laue-Langevin, 71 Avenue des Martyrs, CS 20156, CEDEX 9, 38042 Grenoble, France.
  • Zhang Q; Centre for High-Resolution Electron Microscopy, ShanghaiTech University, Shanghai 201210, China.
  • Terasaki O; Centre for High-Resolution Electron Microscopy, ShanghaiTech University, Shanghai 201210, China.
  • Ramírez-Castellanos J; Inorganic Chemistry Department, Chemical Sciences Faculty, Universidad Complutense de Madrid, 28040 Madrid, Spain.
  • González-Calbet JM; Inorganic Chemistry Department, Chemical Sciences Faculty, Universidad Complutense de Madrid, 28040 Madrid, Spain.
Nanomaterials (Basel) ; 13(14)2023 Jul 12.
Article en En | MEDLINE | ID: mdl-37513065
ABSTRACT
This article focuses on the Na2O-Ga2O3-TiO2 system, which is barely explored in the study of transparent conductive oxides (TCOs). NaxGa4+xTin-4-xO2n-2 (n = 5, 6, and 7 and x ≈ 0.7-0.8) materials were characterized using neutron powder diffraction and aberration-corrected scanning transmission electron microscopy. Activation energy, as a function of different structures depending on tunnel size, shows a significant improvement in Na+ ion conduction from hexagonal to octagonal tunnels. New insights into the relationship between the crystal structure and the transport properties of TCOs, which are crucial for the design and development of new optoelectronic devices, are provided.
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