Electro-absorption modulated 53 Gbps widely tunable laser based on half-wave V-coupled cavities.
Opt Lett
; 49(13): 3798-3801, 2024 Jul 01.
Article
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| ID: mdl-38950271
ABSTRACT
In this paper, a 53â
Gbps widely tunable transmitter is experimentally demonstrated for the first time, to our knowledge. An InGaAlAs/InP multiple-quantum-well (MQW) wafer is used with an identical layer structure for both the V-coupled cavity laser (VCL) and the electro-absorption modulator (EAM). The VCL uses a shallow-etched waveguide to reduce loss, while the EAM uses a deep-etched waveguide to increase the 3-dB modulation bandwidth. With the temperature varying from 19.5 to 30°C, the transmitter achieves wavelength tuning of 42 channels with a spacing of 100â
GHz, corresponding to a tuning range of 32.6â
nm from 1538.94 to 1571.54â
nm. The static extinction ratio (ER) for all channels is higher than 14â
dB. The measured 3-dB electro-optic (E0) bandwidth of the transmitter is over 40â
GHz, which fits well with the calculated 3-dB bandwidth. At a fixed peak-to-peak driving voltage of 2.4â
V, all channels exhibit clearly an open eye diagram with a 53â
Gbps non-return-to-zero (NRZ) signal, while the dynamic ER is higher than 4.5â
dB.
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Año:
2024
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Article