Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy.

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2 heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.

Tantalum clusters supported on silica-alumina: influence of support composition and chemistry on cluster structure.

Small cationic tantalum clusters were prepared on the surfaces of SiO2, silica-aluminas, and gamma-Al2O3 supports by treating physisorbed pentabenzyltantalum at 523 K for 24 h in flowing H2. The rate of decomposition and the products formed in the decomposition of pentabenzyltantalum are dependent on the support composition. When the support was SiO2, the evolved products were mainly biphenyl and a small amount of toluene, indicating that the Ta-C bond in pentabenzyltantalum was activated. As the alumina content of the support increased, diphenylmethane, benzene, and ethylene were increasingly formed, and these products show that the activation of the C-C bonds linking the C atoms of methyl groups to the aromatic rings of the benzyl ligands was facilitated. Infrared spectra of the surface species and mass spectra of the effluents formed during the treatment show that the composition of the support had significant influence on the decomposition of pentabenzyltantalum, and the chemistry is inferred to be related to the electron-donor properties of the supports. Extended X-ray absorption fine structure (EXAFS) spectra recorded at the Ta LIII edge indicate the formation of clusters with a Ta-Ta first-shell coordination number of approximately 3, and images obtained by scanning transmission electron microscopy (STEM) confirm the presence of such small clusters. X-ray absorption near edge structure (XANES) data indicate that the formal oxidation state of the tantalum in the clusters decreased from approximately 3.0 to approximately 2.6 as the support was changed from SiO2 to silica-aluminas to gamma-Al2O3. The data suggest that the tantalum clusters were anchored to the supports via bridging O atoms. The EXAFS data show that the support composition had little influence on the cluster structure.