Curcumin and enalapril ameliorate renal failure by antagonizing inflammation in 5/6 nephrectomized rats: role of phospholipase and cyclooxygenase.

Previously, we showed that curcumin prevents chronic kidney disease (CKD) development in ⅚ nephrectomized (Nx) rats when given within 1 wk after Nx (Ghosh SS, Massey HD, Krieg R, Fazelbhoy ZA, Ghosh S, Sica DA, Fakhry I, Gehr TW. Am J Physiol Renal Physiol 296: F1146-F1157, 2009). To better mimic the scenario for renal disease in humans, we began curcumin and enalapril therapy when proteinuria was already established. We hypothesized that curcumin, by blocking the inflammatory mediators TNF-α and IL-1ß, could also reduce cyclooxygenase (COX) and phospholipase expression in the kidney. Nx animals were divided into untreated Nx, curcumin-treated, and enalapril-treated groups. Curcumin (75 mg/kg) and enalapril (10 mg/kg) were administered for 10 wk. Renal dysfunction in the Nx group, as evidenced by elevated blood urea nitrogen, plasma creatinine, proteinuria, segmental sclerosis, and tubular dilatation, was comparably reduced by curcumin and enalapril, with only enalapril significantly lowering blood pressure. Compared with controls, Nx animals had higher plasma/kidney TNF-α and IL-1ß, which were reduced by curcumin and enalapril treatment. Nx animals had significantly elevated kidney levels of cytosolic PLA(2), calcium-independent intracellular PLA(2), COX 1, and COX 2, which were comparably reduced by curcumin and enalapril. Studies in mesangial cells and macrophages were carried out to establish that the in vivo increase in PLA(2) and COX were mediated by TNF-α and IL-1ß and that curcumin, by antagonizing the cytokines, could significantly reduce both PLA(2) and COX. We conclude that curcumin ameliorates CKD by blocking inflammatory signals even if it is given at a later stage of the disease.

Highly conducting phosphorous doped Nc-Si:H thin films deposited at high deposition rate by hot-wire chemical vapor deposition method.

In this paper, we report the synthesis of highly conducting phosphorous doped hydrogenated nanocrystalline silicon (nc-Si:H) films at substantially low substrate temperature (200 degrees C) by hot-wire chemical vapor deposition (HW-CVD) method using pure silane (SiH4) and phosphine (PH3) gas mixture without hydrogen dilution. Structural, optical and electrical properties of these films were investigated as a function of PH3 gas-phase ratio. The characterization of these films by low-angle X-ray diffraction, Raman spectroscopy and atomic force microscopy revealed that, the incorporation of phosphorous in nc-Si:H induces an amorphization in the nc-Si:H film structure. Fourier transform infrared spectroscopy analysis indicates that hydrogen predominately incorporated in phosphorous doped n-type nc-Si:H films mainly in di-hydrogen species (Si-H2) and poly-hydrogen (Si-H2)n bonded species signifying that the films become porous, and micro-void rich. We have observed high band gap (1.97-2.37 eV) in the films, though the hydrogen content is low (< 1.4 at.%) over the entire range of PH3 gas-phase ratio studied. Under the optimum deposition conditions, phosphorous doped nc-Si:H films with high dark conductivity (sigma Dark -5.3 S/cm), low charge-carrier activation energy (E(act) - 132 meV) and high band gap (- 2.01 eV), low hydrogen content (- 0.74 at.%) were obtained at high deposition rate (12.9 angstroms/s).