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1.
Eur J Clin Nutr ; 77(3): 342-347, 2023 03.
Artículo en Inglés | MEDLINE | ID: mdl-36418536

RESUMEN

BACKGROUND: Many people in modern society have insufficient exposure to ultraviolet B (UVB) sunlight, which may lead to vitamin D deficiency. We aimed to investigate the effect of a proto-type wearable light-emitting diode (LED) device emitting UVB light on serum 25-hydroxyvitamin D levels. METHODS: A total of 136 healthy adults were randomly assigned to receive either an active device emitting UVB light with a peak wavelength of 285 nm (n = 64) or a sham device emitting visible light (n = 72). All participants wore the device for a total of two minutes, one minute on each forearm, every day for 4 weeks. Serum 25-hydroxyvitamin D levels were assessed at baseline, 2, and 4 weeks of intervention, and 2 weeks after the end of the intervention. RESULTS: A significant difference was found between the experimental and control groups in changes in serum 25-hydroxyvitamin D levels from baseline after two (0.25 ± 3.10 ng/mL vs. -1.07 ± 2.68 ng/mL, p = 0.009) and 4 weeks of intervention (0.75 ± 3.98 ng/mL vs. -1.75 ± 3.04 ng/mL, p < 0.001). In the experimental group, the dropout rate due to mild, self-limiting adverse skin reactions was 11.8% (9/76). The mean total 25-hydroxyvitamin D production after UVB exposure was estimated at 0.031 ng/mL per 1 cm2 of skin area. CONCLUSIONS: A prototype wearable LED UVB device was effective for improving 25-hydroxyvitamin D status. The development of a safer wearable LED device for phototherapy may provide a novel daily, at-home option for vitamin D supplementation.


Asunto(s)
Deficiencia de Vitamina D , Vitamina D , Adulto , Humanos , Calcifediol , Rayos Ultravioleta , Deficiencia de Vitamina D/prevención & control
2.
ACS Nano ; 8(1): 650-6, 2014 Jan 28.
Artículo en Inglés | MEDLINE | ID: mdl-24350996

RESUMEN

Graphene offers great promise to complement the inherent limitations of silicon electronics. To date, considerable research efforts have been devoted to complementary p- and n-type doping of graphene as a fundamental requirement for graphene-based electronics. Unfortunately, previous efforts suffer from undesired defect formation, poor controllability of doping level, and subtle environmental sensitivity. Here we present that graphene can be complementary p- and n-doped by simple polymer coating with different dipolar characteristics. Significantly, spontaneous vertical ordering of dipolar pyridine side groups of poly(4-vinylpyridine) at graphene surface can stabilize n-type doping at room-temperature ambient condition. The dipole field also enhances and balances the charge mobility by screening the impurity charge effect from the bottom substrate. We successfully demonstrate ambient stable inverters by integrating p- and n-type graphene transistors, which demonstrated clear voltage inversion with a gain of 0.17 at a 3.3 V input voltage. This straightforward polymer doping offers diverse opportunities for graphene-based electronics, including logic circuits, particularly in mechanically flexible form.

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