Valley-conserved topological integrated antenna for 100-Gbps THz 6G wireless.

The topological phase revolutionized wave transport, enabling integrated photonic interconnects with sharp light bending on a chip. However, the persistent challenge of momentum mismatch during intermedium topological mode transitions due to material impedance inconsistency remains. We present a 100-Gbps topological wireless communication link using integrated photonic devices that conserve valley momentum. The valley-conserved silicon topological waveguide antenna achieves a 12.2-dBi gain, constant group delay across a 30-GHz bandwidth and enables active beam steering within a 36° angular range. The complementary metal oxide semiconductor-compatible valley-conserved devices represent a major milestone in hybrid electronic-photonic-based topological wireless communications, enabling terabit-per-second backhaul communication, high throughput, and intermedium transport of information carriers, vital for the future of communication from the sixth to X generation.

Active Ultrahigh-Q (0.2 × 106 ) THz Topological Cavities on a Chip.

Rapid scaling of semiconductor devices has led to an increase in the number of processor cores and integrated functionalities onto a single chip to support the growing demands of high-speed and large-volume consumer electronics. To meet this burgeoning demand, an improved interconnect capacity in terms of bandwidth density and active tunability is required for enhanced throughput and energy efficiency. Low-loss terahertz silicon interconnects with larger bandwidth offer a solution for the existing inter-/intrachip bandwidth density and energy-efficiency bottleneck. Here, a low-loss terahertz topological interconnect-cavity system is presented that can actively route signals through sharp bends, by critically coupling to a topological cavity with an ultrahigh-quality (Q) factor of 0.2 × 106 . The topologically protected large Q factor cavity enables energy-efficient optical control showing 60 dB modulation. Dynamic control is further demonstrated of the critical coupling between the topological interconnect-cavity for on-chip active tailoring of the cavity resonance linewidth, frequency, and modulation through complete suppression of the back reflection. The silicon topological cavity is complementary metal-oxide-semiconductor (CMOS)-compatible and highly desirable for hybrid electronic-photonic technologies for sixth (6G) generation terahertz communication devices. Ultrahigh-Q cavity also paves the path for designing ultrasensitive topological sensors, terahertz topological integrated circuits, and nonlinear topological photonic devices.