Effect of Mulberry Leaf powder on reproductive performance, serum indexes and milk amino acid composition in lactating sows.

Experiment was conducted to study the effects of Mulberry Leaf (ML) powder on reproductive performance, serum and milk amino acid composition in sows. Fifty sows (D 85 at gestation) with parity 3 or 4 were randomly divided into 5 groups: C, M100, M200, M300 and M400, receiving 0, 100, 200, 300 and 400 g ML powder per sow per day. Blood and milk of sows at Days 1 and 21 of lactation were collected. Results showed that average daily feed intake (ADFI) during lactation was higher in groups supplemented ML compared with control group (p < 0.01). Litter weight gain during lactation was higher in M400 than in groups M200 and C (p < 0.05), with no significant difference compared with M100 and M300. Serum glucose concentration in groups M400 and M300 was higher than those in the other groups (p < 0.01). Serum HDL-C concentration in group M400 was significantly greater than those in groups M100 and M200 (p < 0.05), with no significant difference between group M400 and groups M300, control. Milk amino acid concentrations such as isoleucine, leucine, lysine and valine were all lower in group M400 than in control (p < 0.01). Serum methionine (Met) concentration was higher in M300 than in other groups (p < 0.01). Milk Met concentration in group C was higher than those of the sows in the group M400, with no significant difference compared with groups M100, M200 and M300 (p < 0.05). Serum Lys and Met concentrations were lower in M400 than in control group (p < 0.05). In summary, our results have revealed the ML supplementation at a high dose such as 300 g/day during later gestation and lactation showed benefit in regulating lipid and amino acid metabolism in sows and then improved growth performance of their offspring.

Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing.

The solution-processed deposition of metal-oxide semiconducting materials enables the fabrication of large-area and low-cost electronic devices by using printing technologies. Additionally, the simple patterning process of these types of materials become an important issue, as it can simplify the cost and process of fabricating electronics such as thin-film transistors (TFTs). In this study, using the electrohydrodynamic (EHD) jet printing technique, we fabricated directly patterned zinc-tin-oxide (ZTO) semiconductors as the active layers of TFTs. The straight lines of ZTO semiconductors were successfully drawn using a highly soluble and homogeneous solution that comprises zinc acrylate and tin-chloride precursors. Besides, we found the optimum condition for the fabrication of ZTO oxide layers by analyzing the thermal effect in processing. Using the optimized condition, the resulting devices exhibited satisfactory TFT characteristics with conventional electrodes and conducting materials. Furthermore, these metal-oxide TFTs were successfully applied to complementary inverter with conventional p-type organic semiconductor-based TFT, showing high quality of voltage transfer characteristics. Thus, these printed ZTO TFT results demonstrated that solution processable metal-oxide transistors are promising for the realization of a more sustainable and printable next-generation industrial technology.