Microcomb-driven silicon photonic systems.

Microcombs have sparked a surge of applications over the past decade, ranging from optical communications to metrology1-4. Despite their diverse deployment, most microcomb-based systems rely on a large amount of bulky elements and equipment to fulfil their desired functions, which is complicated, expensive and power consuming. By contrast, foundry-based silicon photonics (SiPh) has had remarkable success in providing versatile functionality in a scalable and low-cost manner5-7, but its available chip-based light sources lack the capacity for parallelization, which limits the scope of SiPh applications. Here we combine these two technologies by using a power-efficient and operationally simple aluminium-gallium-arsenide-on-insulator microcomb source to drive complementary metal-oxide-semiconductor SiPh engines. We present two important chip-scale photonic systems for optical data transmission and microwave photonics, respectively. A microcomb-based integrated photonic data link is demonstrated, based on a pulse-amplitude four-level modulation scheme with a two-terabit-per-second aggregate rate, and a highly reconfigurable microwave photonic filter with a high level of integration is constructed using a time-stretch approach. Such synergy of a microcomb and SiPh integrated components is an essential step towards the next generation of fully integrated photonic systems.

Laser soliton microcombs heterogeneously integrated on silicon.

Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection and ranging, or photonics-assisted signal processing. We report heterogeneously integrated laser soliton microcombs combining both indium phospide/silicon (InP/Si) semiconductor lasers and ultralow-loss silicon nitride (Si3N4) microresonators on a monolithic silicon substrate. Thousands of devices can be produced from a single wafer by using complementary metal-oxide-semiconductor-compatible techniques. With on-chip electrical control of the laser-microresonator relative optical phase, these devices can output single-soliton microcombs with a 100-gigahertz repetition rate. Furthermore, we observe laser frequency noise reduction due to self-injection locking of the InP/Si laser to the Si3N4 microresonator. Our approach provides a route for large-volume, low-cost manufacturing of narrow-linewidth, chip-based frequency combs for next-generation high-capacity transceivers, data centers, space and mobile platforms.

[Stabilization Treatment of Pb and Zn in Contaminated Soils and Mechanism Studies].

In the present work, the combined application of potassium dihydrogen phosphate, quick lime and potassium chloride was used to immobilize the Pb and Zn in contaminated soils. The efficiency of the process was evaluated through leaching tests and Tessier sequential extraction procedure. The mechanism of stabilization was analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM) to reveal the mechanism of stabilization. The results showed that the stabilizing efficiency of Pb contaminated soils was above 80% and the leaching concentrations of Pb, Zn were far below the threshold when the ratio of exogenous P and soil (mol · mol⁻¹) was 2:1-4: 1, the dosing ratio of CaO was 0.1%-0.5% ( mass fraction) and the dosage of potassium chloride was 0.02-0. 04 mol. Meanwhile, Pb and Zn in soil were transformed from the exchangeable fraction into residual fraction, which implied that the migration of Pb, Zn in soil could be confined by the stabilization treatment. XRD and SEM analysis revealed that Ca-P-Pb precipitation, lead orthophosphate [PbHP04, Pb3 (PO4)2], pyromorphite (Pb-PO4-Cl/OH) and mixed heavy metal deposits (Fe-PO4- Ca-Pb-Zn-OH) could be formed after solidification/stabilization in which Pb and Zn could be wrapped up to form a solidified composition and to prevent leaching.