Complementary Doped Source-Based Reconfigurable Schottky Diode as an Equivalence Logic Gate.

A complementary doped source-based reconfigurable Schottky diode (CDS-RSD) is proposed for the first time. Unlike other types of reconfigurable devices that have source and drain (S/D) regions with the same material, this has a complementary doped source region as well as a metal silicide drain region. Compared to three-terminal reconfigurable transistors, which have both the program gate and control gate, the proposed CDS-RSD does not have a control gate but only a program gate for reconfiguration operation. The drain electrode of the CDS-RSD is not only the output terminal of the current signal but also the input terminal of the voltage signal. Therefore, it is a reconfigurable diode based on high Schottky barriers for both the conduction band and valence band of silicon, which formed on the interface between the silicon and drain electrode. Therefore, the CDS-RSD can be regarded as the simplification of the reconfigurable field effect transistor structure on the premise of retaining the reconfigurable function. The simplified CDS-RSD is more suitable for the improvement of logic gate circuit integration. A brief manufacture process is also proposed. The device performance has been verified through device simulation. The performance of the CDS-RSD as a single-device two-input equivalence logic gate has also been investigated.

A complementary low-Schottky-barrier S/D-based nanoscale dopingless bidirectional reconfigurable field effect transistor with an improved forward current.

In this paper, a nanoscale dopingless bidirectional RFET (BRFET) is proposed. Unlike conventional BRFETs, the proposed BRFET uses two different metal materials to form two different types of Schottky barriers on the interface between the S/D and silicon. For one of the two metal forms, the Schottky barrier height between the conduction band of the semiconductor and one of the two metal materials is lower than half of the energy band gap. The Schottky barrier height between the valence band of the semiconductor and the other kind of the two metal materials is lower than half of the energy band gap of the semiconductor. Therefore, a complementary low Schottky barrier (CLSB) is formed. Therefore, more carriers from the source electrode can easily flow into the semiconductor region through thermionic emission in both n-mode and p-mode compared to conventional BRFET operation, which generates carriers through the band-to-band tunneling effect. Therefore, a larger forward current can be achieved by the proposed CLSB-BRFET. The performance of the CLSB-BRFET is investigated by device simulation and compared with that of the BRFET. The working principle is interpreted through an analysis based on energy band theory. The output characteristics and reconfigurable function are also investigated and verified.