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Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.
Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian.
Affiliation
  • Niu G; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.
  • Kim HD; IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany.
  • Roelofs R; Department of Electronics, Information &Communication Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747, Korea.
  • Perez E; ASM, Kapeldreef 75, Leuven 3001, Belgium.
  • Schubert MA; IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany.
  • Zaumseil P; IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany.
  • Costina I; IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany.
  • Wenger C; IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany.
Sci Rep ; 6: 28155, 2016 06 17.
Article in En | MEDLINE | ID: mdl-27312225
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Full text: 1 Database: MEDLINE Main subject: Oxides / Semiconductors / Computer Storage Devices / Equipment Design / Hafnium Type of study: Clinical_trials Language: En Journal: Sci Rep Year: 2016 Type: Article Affiliation country: China
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Full text: 1 Database: MEDLINE Main subject: Oxides / Semiconductors / Computer Storage Devices / Equipment Design / Hafnium Type of study: Clinical_trials Language: En Journal: Sci Rep Year: 2016 Type: Article Affiliation country: China