Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.

Kim, Sungjun; Jung, Sunghun; Kim, Min-Hwi; Chen, Ying-Chen; Chang, Yao-Feng; Ryoo, Kyung-Chang; Cho, Seongjae; Lee, Jong-Ho; Park, Byung-Gook.

Afiliación

Kim S; School of Electronics Engineering, Chungbuk National University, Cheongju, 28644, Republic of Korea.
Jung S; Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Republic of Korea.
Kim MH; Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Republic of Korea.
Chen YC; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78758, USA.
Chang YF; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78758, USA.
Ryoo KC; Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Republic of Korea.
Cho S; Department of Electronic Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea.
Lee JH; Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Republic of Korea.
Park BG; Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Republic of Korea.