Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering.

Lee, Jinju; Ryu, Ji-Ho; Kim, Boram; Hussain, Fayyaz; Mahata, Chandreswar; Sim, Eunjin; Ismail, Muhammad; Abbas, Yawar; Abbas, Haider; Lee, Dong Keun; Kim, Min-Hwi; Kim, Yoon; Choi, Changhwan; Park, Byung-Gook; Kim, Sungjun

Lee, Jinju; Ryu, Ji-Ho; Kim, Boram; Hussain, Fayyaz; Mahata, Chandreswar; Sim, Eunjin; Ismail, Muhammad; Abbas, Yawar; Abbas, Haider; Lee, Dong Keun; Kim, Min-Hwi; Kim, Yoon; Choi, Changhwan; Park, Byung-Gook; Kim, Sungjun.

Afiliación

Lee J; School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea.
Ryu JH; School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea.
Kim B; School of Electrical and Computer Engineering, University of Seoul, Seoul, 02504, South Korea.
Hussain F; Materials Research Simulation Laboratory (MSRL) Department of physics, Bahauddin Zakariya University, Multan 60800, Pakistan.
Mahata C; School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea.
Sim E; School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea.
Ismail M; School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea.
Abbas Y; Department of Physics, Khalifa University, Abu Dhabi 127788, United Arab Emirates.
Abbas H; Division of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea.
Lee DK; Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea.
Kim MH; Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea.
Kim Y; School of Electrical and Computer Engineering, University of Seoul, Seoul, 02504, South Korea.
Choi C; Division of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea.
Park BG; Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea.
Kim S; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.

ACS Appl Mater Interfaces ; 12(30): 33908-33916, 2020 Jul 29.

Article en En | MEDLINE | ID: mdl-32608233

Palabras clave

boron nitride; density function theory; neural network; resistive switching; synaptic device

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Año: 2020 Tipo del documento: Article País de afiliación: Corea del Sur