Back-Channel Defect Termination by Sulfur for p-Channel Cu<sub>2</sub>O Thin-Film Transistors.

Chang, Hsuan; Huang, Chi-Hsin; Matsuzaki, Kosuke; Nomura, Kenji

Back-Channel Defect Termination by Sulfur for p-Channel Cu₂O Thin-Film Transistors.

Chang, Hsuan; Huang, Chi-Hsin; Matsuzaki, Kosuke; Nomura, Kenji.

Afiliación

Chang H; Department of Electrical and Computer Engineering, University of California San Diego, 9500 German Dr., La Jolla, California 92093, United States.
Huang CH; Department of Electrical and Computer Engineering, University of California San Diego, 9500 German Dr., La Jolla, California 92093, United States.
Matsuzaki K; Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatuta 4259, Midori, Yokohama 226-8503, Japan.
Nomura K; Department of Electrical and Computer Engineering, University of California San Diego, 9500 German Dr., La Jolla, California 92093, United States.

ACS Appl Mater Interfaces ; 12(46): 51581-51588, 2020 Nov 18.

Article en En | MEDLINE | ID: mdl-33147003

Palabras clave

copper interstitial; copper oxide; p-type oxide semiconductor; sulfur defect termination; thin-film transistor

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Año: 2020 Tipo del documento: Article País de afiliación: Estados Unidos