Field-effect at electrical contacts to two-dimensional materials.

Guo, Yao; Sun, Yan; Tang, Alvin; Wang, Ching-Hua; Zhao, Yanqing; Bai, Mengmeng; Xu, Shuting; Xu, Zheqi; Tang, Tao; Wang, Sheng; Qiu, Chenguang; Xu, Kang; Peng, Xubiao; Han, Junfeng; Pop, Eric; Chai, Yang

Guo, Yao; Sun, Yan; Tang, Alvin; Wang, Ching-Hua; Zhao, Yanqing; Bai, Mengmeng; Xu, Shuting; Xu, Zheqi; Tang, Tao; Wang, Sheng; Qiu, Chenguang; Xu, Kang; Peng, Xubiao; Han, Junfeng; Pop, Eric; Chai, Yang.

Afiliación

Guo Y; School of Physics, Beijing Institute of Technology, Beijing, 100081 China.
Sun Y; School of Physics, Beijing Institute of Technology, Beijing, 100081 China.
Tang A; Department of Electrical Engineering and Stanford SystemX Alliance, Stanford University, Stanford, CA 94305 USA.
Wang CH; Department of Electrical Engineering and Stanford SystemX Alliance, Stanford University, Stanford, CA 94305 USA.
Zhao Y; School of Physics, Beijing Institute of Technology, Beijing, 100081 China.
Bai M; School of Physics, Beijing Institute of Technology, Beijing, 100081 China.
Xu S; School of Physics, Beijing Institute of Technology, Beijing, 100081 China.
Xu Z; School of Physics, Beijing Institute of Technology, Beijing, 100081 China.
Tang T; Advanced Manufacturing EDA Co., Ltd., Shanghai, 201204 China.
Wang S; Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing, 100871 China.
Qiu C; Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing, 100871 China.
Xu K; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
Peng X; School of Physics, Beijing Institute of Technology, Beijing, 100081 China.
Han J; School of Physics, Beijing Institute of Technology, Beijing, 100081 China.
Pop E; Department of Electrical Engineering and Stanford SystemX Alliance, Stanford University, Stanford, CA 94305 USA.
Chai Y; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.

Nano Res ; 14(12): 4894-4900, 2021.

Article en En | MEDLINE | ID: mdl-34336143

Palabras clave

electrical contact; field-effect; in-memory-computing; nonlinearity; two-dimensional materials

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Texto completo: 1 Bases de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nano Res Año: 2021 Tipo del documento: Article