Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal-Oxide Semiconductor Technology. | Sensors (Basel);24(2)2024 Jan 16. | MEDLINE

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Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal-Oxide Semiconductor Technology.

Kim, Min-Su; Yoo, Sang-Sun.

Afiliación

Kim MS; Department of Information and Electronic Engineering, Mokpo National University, Muan 58554, Republic of Korea.
Yoo SS; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.

Sensors (Basel) ; 24(2)2024 Jan 16.

Article en En | MEDLINE | ID: mdl-38257660

Palabras clave

RC feedback; bypass mode; fifth generation (5G); low-noise amplifier (LNA); new radio (NR); series inductive-peaking; wideband

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2024 Tipo del documento: Article

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2024 Tipo del documento: Article