Sub-2 V, Transfer-Stamped Organic/Inorganic Complementary Inverters Based on Electrolyte-Gated Transistors.

Cho, Kyung Gook; Kim, Hyun Je; Yang, Hae Min; Seol, Kyoung Hwan; Lee, Seung Ju; Lee, Keun Hyung

Cho, Kyung Gook; Kim, Hyun Je; Yang, Hae Min; Seol, Kyoung Hwan; Lee, Seung Ju; Lee, Keun Hyung.

Afiliação

Cho KG; Department of Chemistry and Chemical Engineering , Inha University , Incheon 22212 , Republic of Korea.
Kim HJ; Department of Chemistry and Chemical Engineering , Inha University , Incheon 22212 , Republic of Korea.
Yang HM; Department of Chemistry and Chemical Engineering , Inha University , Incheon 22212 , Republic of Korea.
Seol KH; Department of Chemistry and Chemical Engineering , Inha University , Incheon 22212 , Republic of Korea.
Lee SJ; Department of Chemistry and Chemical Engineering , Inha University , Incheon 22212 , Republic of Korea.
Lee KH; Department of Chemistry and Chemical Engineering , Inha University , Incheon 22212 , Republic of Korea.

ACS Appl Mater Interfaces ; 10(47): 40672-40680, 2018 Nov 28.

Article em En | MEDLINE | ID: mdl-30277059

Palavras-chave

complementary inverter; electrolyte-gated transistor; ionogel; low-voltage operation; transfer stamping

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Ano de publicação: 2018 Tipo de documento: Article