Readily Accessible Metallic Micro-Island Arrays for High-Performance Metal Oxide Thin-Film Transistors.

Kim, Jaehyun; Park, Joon Bee; Zheng, Ding; Kim, Joon-Seok; Cheng, Yuhua; Park, Sung Kyu; Huang, Wei; Marks, Tobin J; Facchetti, Antonio

Kim, Jaehyun; Park, Joon Bee; Zheng, Ding; Kim, Joon-Seok; Cheng, Yuhua; Park, Sung Kyu; Huang, Wei; Marks, Tobin J; Facchetti, Antonio.

Afiliação

Kim J; Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA.
Park JB; Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, Korea.
Zheng D; Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA.
Kim JS; Department of Materials Science and Engineering, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA.
Cheng Y; School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan, 611731, China.
Park SK; Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, Korea.
Huang W; Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA.
Marks TJ; School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan, 611731, China.
Facchetti A; Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA.

Adv Mater ; 34(45): e2205871, 2022 Nov.

Article em En | MEDLINE | ID: mdl-36039798

Palavras-chave

amorphous indium-gallium-zinc-oxide; metal oxide semiconductors; metallic capping layers; technology computer-aided design simulations; thin-film transistors

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Adv Mater Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos